Simulation of Spin-Dependent Electronic Transport through Resonant Tunnelling Diode with Paramagnetic Quantum Well

• Authors: P. Wójcik , B. Spisak , M. Wołoszyn , J. Adamowski
• Languages of publication: EN

Abstracts

EN

The spin-dependent electronic transport is investigated in a paramagnetic resonant tunnelling diode formed from Zn_{1 - x}Mn_{x}Se quantum well between two ZnBeSe barrier layers. The spin-dependent current-voltage characteristics have been obtained in the presence of magnetic fields by solving the quantum kinetic equation for the Wigner distribution function and the Poisson equation in the self-consistent procedure. We have obtained two distinct current peaks due to the giant Zeeman splitting of electronic levels in a qualitative agreement with experiment. We have shown that the sign of spin current polarization can be reversed by tuning the bias voltage. Moreover, we have found the bias voltage windows with a nearly constant polarization.

Keywords

EN

72.25.Dc; 73.63.-b

Discipline

• 73.63.-b: Electronic transport in nanoscale materials and structures(see also 73.23.-b Electronic transport in mesoscopic systems)
• 72.25.Dc: Spin polarized transport in semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 5
• Pages: 648-650

Dates

published

2011-05

Contributors

author

P. Wójcik

• Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków, Poland

author

B. Spisak

• Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków, Poland

author

M. Wołoszyn

• Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków, Poland

author

J. Adamowski

• Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków, Poland

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Identifiers

DOI

10.12693/APhysPolA.119.648