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2011 | 119 | 5 | 648-650
Article title

Simulation of Spin-Dependent Electronic Transport through Resonant Tunnelling Diode with Paramagnetic Quantum Well

Content
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Languages of publication
EN
Abstracts
EN
The spin-dependent electronic transport is investigated in a paramagnetic resonant tunnelling diode formed from Zn_{1 - x}Mn_{x}Se quantum well between two ZnBeSe barrier layers. The spin-dependent current-voltage characteristics have been obtained in the presence of magnetic fields by solving the quantum kinetic equation for the Wigner distribution function and the Poisson equation in the self-consistent procedure. We have obtained two distinct current peaks due to the giant Zeeman splitting of electronic levels in a qualitative agreement with experiment. We have shown that the sign of spin current polarization can be reversed by tuning the bias voltage. Moreover, we have found the bias voltage windows with a nearly constant polarization.
Keywords
EN
Year
Volume
119
Issue
5
Pages
648-650
Physical description
Dates
published
2011-05
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n522kz
Identifiers
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