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2011 | 119 | 5 | 621-623
Article title

Capacitance-Voltage Studies of Ti/p-ZnTe Schottky Barrier Structures Containing CdTe Quantum Dots

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Languages of publication
EN
Abstracts
EN
In this paper the electronic states of self-organized CdTe quantum dots embedded in ZnTe matrix are studied by means of capacitance-voltage (C-V) characteristics within the temperature range of 180-300 K. A reference diode of the same layer structure but without quantum dots is studied also for comparison. The C-V characteristics measured for the reference diode exhibit bulk behaviour in contrast to the quantum dots sample for which a characteristic step corresponding to discharging of quantum dots is clearly visible within broad range of temperatures. A quasistatic model based on the self-consistent solution of the Poisson equations is used to simulate the capacitance. By comparison the calculated C-V curve with experimental curve the apparent thermal activation energy for hole emission from the quantum dots to the ZnTe matrix is found to be equal to (0.12 ± 0.03) eV.
Keywords
EN
Publisher

Year
Volume
119
Issue
5
Pages
621-623
Physical description
Dates
published
2011-05
Contributors
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
References
  • 1. P.N. Brunkov, S.G. Konnikov, V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov, V.M. Maximov, N.N. Ledentsov, P.S. Kop'ev, Semiconductors 30, 492 (1996)
  • 2. H. Bellakhder, A. Outzourhit, E.L. Ameziane, Thin Solid Films 382, 30 (2001)
  • 3. K. Sato, M. Hanafusa, A. Noda, A. Arakawa, M. Uchida, T. Asahi, O. Oda, J. Cryst. Growth 214/215, 1080 (2000)
  • 4. A. Continenza, S. Massidda, Phys. Rev. B 50, 11949 (1994)
  • 5. B. Späth, J. Fritsche, F. Säuberlich, A. Klein, W. Jaegermann, Thin Solid Films 480-481, 204 (2005)
  • 6. G. Karczewski, S. Maćkowski, M. Kutrowski, T. Wojtowicz, J. Kossut, Appl. Phys. Lett. 74, 3011 (1999)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n514kz
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