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Number of results
2011 | 119 | 5 | 609-611

Article title

Nonlinear Zeeman Splitting of Holes in Doped GaAs Heterostructures

Content

Title variants

Languages of publication

EN

Abstracts

EN
Polarization-resolved photoluminescence from two-dimensional GaAs/GaAlAs heterostructures doped with acceptors was studied in high magnetic fields. Measurements were carried out in low temperatures up to 2 K and magnetic field up to 21 T. Experiments performed in the Faraday configuration enabled to resolve hole states with different spin orientation. We observed a nonlinear behavior of valence-band g factor in strong magnetic fields. To explain obtained results, a detailed theoretical calculation was carried out based on the Luttinger model for valence-band states. We examined the spin splitting of hole levels under the influence of both external magnetic field and built-in electric field existing in doped heterostructures. Changes of hole g factor with the width of the structure and the density of two-dimensional carriers are discussed.

Keywords

EN

Year

Volume

119

Issue

5

Pages

609-611

Physical description

Dates

published
2011-05

Contributors

author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Grenoble High Magnetic Field Laboratory, CNRS, Grenoble, France

References

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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv119n510kz
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