Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl

PL EN


Preferences help
enabled [disable] Abstract
Number of results
2011 | 119 | 5 | 606-608

Article title

Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions

Content

Title variants

Languages of publication

EN

Abstracts

EN
Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.

Keywords

Contributors

author
  • Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
  • Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Groupe d'Etude des Semiconducteurs, Université Montpellier 2, Montpellier, France
  • CNRS, UMR 5650, cc074, pl. Eugène Bataillon, 34095 Montpellier Cedex 5, France
author
  • Laboratoire de Photonique et Nanostructures, CNRS, Marcoussis, France
author
  • Laboratoire de Photonique et Nanostructures, CNRS, Marcoussis, France

References

  • 1. M. Gryglas, M. Baj, B. Chenaud, B. Jouault, A. Cavanna, G. Faini, Phys. Rev. B 69, 165302 (2004)
  • 2. B. Jouault, M. Gryglas, G. Faini, U. Gennser, A. Cavanna, M. Baj, D.K. Maude, Phys. Rev. B 73, 155415 (2006)
  • 3. I.E. Itskevich, L. Eaves, P.C. Main, M. Henini, G. Hill, Phys. Rev. B 57, 7214 (1998)
  • 4. M. Gryglas, J. Przybytek, M. Baj, M. Henini, L. Eaves, Acta Phys. Pol. A 100, 403 (2001)
  • 5. Yu.N. Khanin, K.S. Novoselov, E.E. Vdovin, Semiconductors 35, 206 (2001)
  • 6. J. Przybytek, M. Baj, Acta Phys. Pol. A 112, 221 (2007)
  • 7. J. Przybytek, M. Baj, Am. Inst. Phys. Conf. Proc. 1129, 333 (2009)
  • 8. J.A. Majewski, P. Vogl, P. Lugli, in: Proc. 25th Int. Conf. Semiconductors, Osaka, 2000, Springer, Heidelberg 2001
  • 9. Sh. Kogan, Electronic Noise and Fluctuations in Solids, Cambridge University Press, 1996

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv119n509kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.