Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions

• Authors: S. Lewińska , M. Gryglas-Borysiewicz , J. Przybytek , M. Baj , B. Jouault , U. Gennser , A. Ouerghi
• Languages of publication: EN

Abstracts

EN

Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.

Keywords

EN

73.61.-r; 71.20.Nr; 73.23.Hk; 73.63.Hs; 72.10.Di; 85.30.Mn; 73.40.Gk

Discipline

• 85.30.Mn: Junction breakdown and tunneling devices (including resonance tunneling devices)
• 73.61.-r: Electrical properties of specific thin films(for optical properties of thin films, see 78.20.-e and 78.66.-w; for magnetic properties of thin films, see 75.70.-i)
• 73.23.Hk: Coulomb blockade; single-electron tunneling
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)
• 73.63.Hs: Quantum wells
• 71.20.Nr: Semiconductor compounds
• 72.10.Di: Scattering by phonons, magnons, and other nonlocalized excitations(see also 71.45.-d Collective effects in electronic structure of bulk materials)

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 5
• Pages: 606-608

Dates

published

2011-05

Contributors

author

S. Lewińska

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

M. Gryglas-Borysiewicz

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

J. Przybytek

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

M. Baj

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

B. Jouault

• Groupe d'Etude des Semiconducteurs, Université Montpellier 2, Montpellier, France
• CNRS, UMR 5650, cc074, pl. Eugène Bataillon, 34095 Montpellier Cedex 5, France

author

U. Gennser

• Laboratoire de Photonique et Nanostructures, CNRS, Marcoussis, France

author

A. Ouerghi

• Laboratoire de Photonique et Nanostructures, CNRS, Marcoussis, France

References

• 1. M. Gryglas, M. Baj, B. Chenaud, B. Jouault, A. Cavanna, G. Faini, Phys. Rev. B 69, 165302 (2004)
• 2. B. Jouault, M. Gryglas, G. Faini, U. Gennser, A. Cavanna, M. Baj, D.K. Maude, Phys. Rev. B 73, 155415 (2006)
• 3. I.E. Itskevich, L. Eaves, P.C. Main, M. Henini, G. Hill, Phys. Rev. B 57, 7214 (1998)
• 4. M. Gryglas, J. Przybytek, M. Baj, M. Henini, L. Eaves, Acta Phys. Pol. A 100, 403 (2001)
• 5. Yu.N. Khanin, K.S. Novoselov, E.E. Vdovin, Semiconductors 35, 206 (2001)
• 6. J. Przybytek, M. Baj, Acta Phys. Pol. A 112, 221 (2007)
• 7. J. Przybytek, M. Baj, Am. Inst. Phys. Conf. Proc. 1129, 333 (2009)
• 8. J.A. Majewski, P. Vogl, P. Lugli, in: Proc. 25th Int. Conf. Semiconductors, Osaka, 2000, Springer, Heidelberg 2001
• 9. Sh. Kogan, Electronic Noise and Fluctuations in Solids, Cambridge University Press, 1996

Identifiers

DOI

10.12693/APhysPolA.119.606