Raman Studies of Defects in Graphene Grown on SiC

• Authors: K. Grodecki , R. Bożek , J. Borysiuk , W. Strupinski , A. Wysmolek , R. Stępniewski , J. Baranowski
• Languages of publication: EN

Abstracts

EN

The Raman scattering studies of multi-layer graphene obtained by high temperature annealing of carbon terminated face of 4H-SiC(000-1) substrates are presented. Intensity ratio of the D and G bands was used to estimate the average size of the graphene flakes constituting carbon structures. The obtained estimates were compared with flake sizes from atomic force microscopy data. We found that even the smallest structures observed by atomic force microscopy images are much bigger than the estimates obtained from the Raman scattering data. The obtained results are discussed in terms of different average flake sizes inside and on the surface of the multi-layer graphene structure, as well as different type of defects which would be present in the investigated structures apart from edge defects.

Keywords

EN

61.48.Gh; 78.30.Fs

Discipline

• 61.48.Gh: Structure of graphene
• 78.30.Fs: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 5
• Pages: 595-596

Dates

published

2011-05

Contributors

author

K. Grodecki

• Institute of Electronic Material Technology, Wólczyńska 133, 01-919 Warsaw, Poland
• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

R. Bożek

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

J. Borysiuk

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Strupinski

• Institute of Electronic Material Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

A. Wysmolek

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

R. Stępniewski

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

J. Baranowski

• Institute of Electronic Material Technology, Wólczyńska 133, 01-919 Warsaw, Poland
• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.119.595