Light-Emitting Diode Degradation and Low-Frequency Noise Characteristics

• Authors: B. Šaulys , J. Matukas , V. Palenskis , S. Pralgauskaitė , G. Kulikauskas
• Languages of publication: EN

Abstracts

EN

Comprehensive investigation of phosphide-based red and nitride-based blue light-emitting diodes characteristics and physical processes that take place in device structure during aging has been carried out. Analysis of noise characteristics (the emitting-light power and the LED voltage fluctuations, also their cross-correlation factor) shows that investigated LEDs degradation is caused by defects that lead to the leakage current and non-radiating recombination increase in the active region or its interfaces. Appearance of the defects first of all manifests in noise characteristics: intensive and strongly correlated 1/f^{α} type optical and electrical fluctuations come out.

Keywords

EN

72.70.+m   74.40.-n   85.30.-z   85.60.Jb  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 4
• Pages: 514-520

Dates

published

2011-04

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Identifiers

DOI

10.12693/APhysPolA.119.514