Light-Emitting Diode Degradation and Low-Frequency Noise Characteristics

• Authors: B. Šaulys , J. Matukas , V. Palenskis , S. Pralgauskaitė , G. Kulikauskas
• Languages of publication: EN

Abstracts

EN

Comprehensive investigation of phosphide-based red and nitride-based blue light-emitting diodes characteristics and physical processes that take place in device structure during aging has been carried out. Analysis of noise characteristics (the emitting-light power and the LED voltage fluctuations, also their cross-correlation factor) shows that investigated LEDs degradation is caused by defects that lead to the leakage current and non-radiating recombination increase in the active region or its interfaces. Appearance of the defects first of all manifests in noise characteristics: intensive and strongly correlated 1/f^{α} type optical and electrical fluctuations come out.

Keywords

EN

72.70.+m; 74.40.-n; 85.30.-z; 85.60.Jb

Discipline

• 85.30.-z: Semiconductor devices(for photodiodes, phototransistors, and photoresistors, see 85.60.Dw; for laser diodes, see 42.55.Px; for semiconductor-based solar cells, see 88.40.-j; for applications of dielectric films in silicon electronics, see 77.55.df)
• 74.40.-n: Fluctuation phenomena
• 72.70.+m: Noise processes and phenomena
• 85.60.Jb: Light-emitting devices

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 4
• Pages: 514-520

Dates

published

2011-04

Contributors

author

B. Šaulys

• Radiophysics Dep., Vilnius University, Saulėtekio av. 9 (III), LT-10222 Vilnius, Lithuania

author

J. Matukas

• Radiophysics Dep., Vilnius University, Saulėtekio av. 9 (III), LT-10222 Vilnius, Lithuania

author

V. Palenskis

• Radiophysics Dep., Vilnius University, Saulėtekio av. 9 (III), LT-10222 Vilnius, Lithuania

author

S. Pralgauskaitė

• Radiophysics Dep., Vilnius University, Saulėtekio av. 9 (III), LT-10222 Vilnius, Lithuania

author

G. Kulikauskas

• Radiophysics Dep., Vilnius University, Saulėtekio av. 9 (III), LT-10222 Vilnius, Lithuania

References

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Identifiers

DOI

10.12693/APhysPolA.119.514