Journal
Article title
Title variants
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Abstracts
Comprehensive investigation of phosphide-based red and nitride-based blue light-emitting diodes characteristics and physical processes that take place in device structure during aging has been carried out. Analysis of noise characteristics (the emitting-light power and the LED voltage fluctuations, also their cross-correlation factor) shows that investigated LEDs degradation is caused by defects that lead to the leakage current and non-radiating recombination increase in the active region or its interfaces. Appearance of the defects first of all manifests in noise characteristics: intensive and strongly correlated 1/f^{α} type optical and electrical fluctuations come out.
Discipline
- 85.30.-z: Semiconductor devices(for photodiodes, phototransistors, and photoresistors, see 85.60.Dw; for laser diodes, see 42.55.Px; for semiconductor-based solar cells, see 88.40.-j; for applications of dielectric films in silicon electronics, see 77.55.df)
- 74.40.-n: Fluctuation phenomena
- 72.70.+m: Noise processes and phenomena
- 85.60.Jb: Light-emitting devices
Journal
Year
Volume
Issue
Pages
514-520
Physical description
Dates
published
2011-04
Contributors
author
- Radiophysics Dep., Vilnius University, Saulėtekio av. 9 (III), LT-10222 Vilnius, Lithuania
author
- Radiophysics Dep., Vilnius University, Saulėtekio av. 9 (III), LT-10222 Vilnius, Lithuania
author
- Radiophysics Dep., Vilnius University, Saulėtekio av. 9 (III), LT-10222 Vilnius, Lithuania
author
- Radiophysics Dep., Vilnius University, Saulėtekio av. 9 (III), LT-10222 Vilnius, Lithuania
author
- Radiophysics Dep., Vilnius University, Saulėtekio av. 9 (III), LT-10222 Vilnius, Lithuania
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n410kz