Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe_2 Chain Crystals

• Authors: N. Gasanly , T. Yildirim
• Languages of publication: EN

Abstracts

EN

Thermally stimulated current measurements were carried out on as-grown TlInSe_2 single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K s^{-1}. The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 × 10^{13} and 3.4 × 10^{12} cm^{-3}) and capture cross section (4.1 × 10^{-28} and 2.9 × 10^{-26} cm^2) of the traps were estimated for peaks A and B, respectively. It was concluded that in these centers retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.

Keywords

EN

71.55.-i; 72.20.Jv; 72.80.Jc

Discipline

• 72.80.Jc: Other crystalline inorganic semiconductors
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping
• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 3
• Pages: 437-441

Dates

published

2011-03

received

2010-09-19

Contributors

author

N. Gasanly

• Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

author

T. Yildirim

• Department of Physics, Nevşehir University, 50300 Nevşehir, Turkey

References

• 1. D. Muller, G. Eulenberger, H. Hahn, Z. Anorg. Allg. Chem. 398, 207 (1973)
• 2. I.V. Alekseev, Semiconductors 32, 526 (1998)
• 3. I.V. Alekseev, Instr. Exp. Tech. 51, 331 (2008)
• 4. K.K. Mamedov, A.M. Abdullaev, E.M. Kerimova, Phys. Status Solidi A 94, 115 (1986)
• 5. E.M. Godzhaev, S.Kh. Khalilov, Kh.S. Khalilova, M.A. Guseinov, A.M. Suleimanova, J. Eng. Phys., Thermophys. 76, 437 (2003)
• 6. I. Samaras, K. Kambas, C. Julien, Mater. Res. Bull. 25, 1 (1990)
• 7. S.N. Mustafaeva, V.A. Ramazanzade, M.M. Asadov, Mater. Chem. Phys. 40, 142 (1995)
• 8. E.M. Godzhaev, A.M. Magerramov, S.I. Safarova, M.A. Nuriev, R.S. Ragimov, Surf. Eng. Appl. Electrochem. 44, 480 (2008)
• 9. N. Mamedov, K. Wakita, A. Ashida, T. Matsui, K. Morii, Thin Solid Films 499, 275 (2006)
• 10. M. Hanias, A.N. Anagnostopoulos, K. Kambas, J. Spyridelis, Physica B 160, 154 (1989)
• 11. M. Hanias, A.N. Anagnostopoulos, K. Kambas, J. Spyridelis, Phys. Rev. B 43, 4135 (1991)
• 12. R. Chen, S.W.S. Mckeever, Theory of Thermoluminescence and Related Phenomena, World Sci., Singapore 1997
• 13. G. Kitis, R. Chen, V. Pagonis, Phys. Status Solidi A 205, 1181 (2008)
• 14. E. Borchi, M. Bruzzi, S. Pirollo, S. Sciortino, J. Phys. D, Appl. Phys. 31, L93 (1998)
• 15. V.M. Skorikov, V.I. Chmyrev, V.V. Zuev, E.V. Larina, Inorg. Mater. 38, 751 (2002)
• 16. Z.Q. Fang, B. Claflin, D.C. Look, J. Appl. Phys. 103, 073714 (2008)
• 17. J.M. Wrobel, A. Gubanski, E. Placzek-Popko, J. Rezmer, P. Becla, J. Appl. Phys. 103, 063720 (2008)
• 18. J. Schafferhans, A. Baumann, C. Deibel, V. Dyakonov, Appl. Phys. Lett. 93, 093303 (2008)
• 19. R. Schmechel, H. Seggern, Phys. Status Solidi A 201, 1215 (2004)
• 20. C. Micocci, A. Rizzo, A. Tepore, J. Appl. Phys. 54, 1924 (1983)
• 21. R. Chen, Y. Kirsh, Analysis of Thermally Stimulated Processes, Pergamon Press, Oxford 1981
• 22. O. Madelung, Semiconductors, Data Handbook, 3rd ed., Springer, Berlin 2004, p. 550
• 23. D.C. Look, Z.Q. Fang, W. Kim, O. Aktas, A. Botchkarev, A. Salvador, H. Morkoc, Appl. Phys. Lett. 63, 3775 (1996)
• 24. C. Manfredotti, R. Murri, A. Quirini, L. Vasanelli, Phys. Status Solidi A 38, 685 (1976)
• 25. R. Bube, Photoelectronic Properties of Semiconductors, Cambridge University Press, Cambridge 1992
• 26. T. Pisarkiewicz, Opto-Electron. Rev. 12, 33 (2004)

Identifiers

DOI

10.12693/APhysPolA.119.437