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2011 | 119 | 3 | 437-441
Article title

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe_2 Chain Crystals

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EN
Abstracts
EN
Thermally stimulated current measurements were carried out on as-grown TlInSe_2 single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K s^{-1}. The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 × 10^{13} and 3.4 × 10^{12} cm^{-3}) and capture cross section (4.1 × 10^{-28} and 2.9 × 10^{-26} cm^2) of the traps were estimated for peaks A and B, respectively. It was concluded that in these centers retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.
Keywords
EN
Publisher

Year
Volume
119
Issue
3
Pages
437-441
Physical description
Dates
published
2011-03
received
2010-09-19
Contributors
author
  • Department of Physics, Middle East Technical University, 06531 Ankara, Turkey
author
  • Department of Physics, Nevşehir University, 50300 Nevşehir, Turkey
References
  • 1. D. Muller, G. Eulenberger, H. Hahn, Z. Anorg. Allg. Chem. 398, 207 (1973)
  • 2. I.V. Alekseev, Semiconductors 32, 526 (1998)
  • 3. I.V. Alekseev, Instr. Exp. Tech. 51, 331 (2008)
  • 4. K.K. Mamedov, A.M. Abdullaev, E.M. Kerimova, Phys. Status Solidi A 94, 115 (1986)
  • 5. E.M. Godzhaev, S.Kh. Khalilov, Kh.S. Khalilova, M.A. Guseinov, A.M. Suleimanova, J. Eng. Phys., Thermophys. 76, 437 (2003)
  • 6. I. Samaras, K. Kambas, C. Julien, Mater. Res. Bull. 25, 1 (1990)
  • 7. S.N. Mustafaeva, V.A. Ramazanzade, M.M. Asadov, Mater. Chem. Phys. 40, 142 (1995)
  • 8. E.M. Godzhaev, A.M. Magerramov, S.I. Safarova, M.A. Nuriev, R.S. Ragimov, Surf. Eng. Appl. Electrochem. 44, 480 (2008)
  • 9. N. Mamedov, K. Wakita, A. Ashida, T. Matsui, K. Morii, Thin Solid Films 499, 275 (2006)
  • 10. M. Hanias, A.N. Anagnostopoulos, K. Kambas, J. Spyridelis, Physica B 160, 154 (1989)
  • 11. M. Hanias, A.N. Anagnostopoulos, K. Kambas, J. Spyridelis, Phys. Rev. B 43, 4135 (1991)
  • 12. R. Chen, S.W.S. Mckeever, Theory of Thermoluminescence and Related Phenomena, World Sci., Singapore 1997
  • 13. G. Kitis, R. Chen, V. Pagonis, Phys. Status Solidi A 205, 1181 (2008)
  • 14. E. Borchi, M. Bruzzi, S. Pirollo, S. Sciortino, J. Phys. D, Appl. Phys. 31, L93 (1998)
  • 15. V.M. Skorikov, V.I. Chmyrev, V.V. Zuev, E.V. Larina, Inorg. Mater. 38, 751 (2002)
  • 16. Z.Q. Fang, B. Claflin, D.C. Look, J. Appl. Phys. 103, 073714 (2008)
  • 17. J.M. Wrobel, A. Gubanski, E. Placzek-Popko, J. Rezmer, P. Becla, J. Appl. Phys. 103, 063720 (2008)
  • 18. J. Schafferhans, A. Baumann, C. Deibel, V. Dyakonov, Appl. Phys. Lett. 93, 093303 (2008)
  • 19. R. Schmechel, H. Seggern, Phys. Status Solidi A 201, 1215 (2004)
  • 20. C. Micocci, A. Rizzo, A. Tepore, J. Appl. Phys. 54, 1924 (1983)
  • 21. R. Chen, Y. Kirsh, Analysis of Thermally Stimulated Processes, Pergamon Press, Oxford 1981
  • 22. O. Madelung, Semiconductors, Data Handbook, 3rd ed., Springer, Berlin 2004, p. 550
  • 23. D.C. Look, Z.Q. Fang, W. Kim, O. Aktas, A. Botchkarev, A. Salvador, H. Morkoc, Appl. Phys. Lett. 63, 3775 (1996)
  • 24. C. Manfredotti, R. Murri, A. Quirini, L. Vasanelli, Phys. Status Solidi A 38, 685 (1976)
  • 25. R. Bube, Photoelectronic Properties of Semiconductors, Cambridge University Press, Cambridge 1992
  • 26. T. Pisarkiewicz, Opto-Electron. Rev. 12, 33 (2004)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n326kz
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