Ac Conductivity and Dielectric Properties of Amorphous Ge_{15}Se_{60}X_{25} ( X = As or Sn) Films

• Authors: N. Hegab , M. Afifi , H. Atyia , M. Ismael
• Languages of publication: EN

Abstracts

EN

The ac conductivity and dielectric properties of Ge_{15}Se_{60} X_{25} (X = As or Sn) thin films are reported in this paper. The thin films were deposited by thermal evaporation at 10^{-5} Torr pressure. The films were well characterized by X-ray diffraction, differential thermal analysis and energy dispersive X-ray spectroscopy. The ac conductivity was measured over temperature range 303-413 K and frequency range 10^2-10^5 Hz. The frequency dependence of the ac conductivity was found to be linear with slope which lies very close to unity and is independent of temperature. This behavior can be explained in terms of the correlated barrier hopping between centers forming intimate valence alternation pairs. Values of the dielectric constant ε_1 were found to decrease with frequency and increase with temperature. The maximum barrier height W_{m} for each sample, which was calculated from the dielectric measurements according to the Guinitin equation, agrees with the theory of hopping of charge carriers over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized state near the Fermi level was estimated for the studied films.

Keywords

EN

72.80.Ng; 77.22.-d

Discipline

• 77.22.-d: Dielectric properties of solids and liquids(for dielectric properties of tissues and organs, see 87.19.rf)
• 72.80.Ng: Disordered solids

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 3
• Pages: 416-423

Dates

published

2011-03

received

2010-05-08

(unknown)

2010-10-11

Contributors

author

N. Hegab

• Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt

author

M. Afifi

• Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt

author

H. Atyia

• Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt

author

M. Ismael

• Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt

References

• 1. A.V. Stronski, in: Proc. NATO Advanced Research Workshop on Micro-electronic Interconnections and Assembly, Eds. G. Haraman, P. Mach, Kluwer Academic, Netherlands 1998, p. 263
• 2. A. Ganyoo, N. Yoshida, K. Shimakawa, Recent Res. Dev. Appl. Phys. 2, 129 (1999)
• 3. M.S. Iovu, S.D. Shutov, M. Popescu, J. Non-Cryst. Solids, 299-302, 924 (2002)
• 4. E. Maquez, T. Wagner, J.M. Gonzalez-Leal, A.M. Bemal-Oliva, R. Prieto-Alcon, R. Jimenez-Garay, P.J.S. Ewen, J. Non.-Cryst. Solids 274, 62 (2000)
• 5. A. Arsh, M.K. Lebanov, V. Lyubin, L. Shapiro, A. Feigel, M. Veiger, B. Sfez, Opt.-Mater. 26, 301 (2004)
• 6. V.F.Lyubin, M. Klebanov, A. Feigel, B. Sfez, J. Non-Cryst. Solids 459, 183 (2004)
• 7. R.A. Street, D.K. Biegelsen, J. Non-Cryst. Solids 32, 339 (1979)
• 8. P. Agarwal, S. Goel, S.K. Tripathi, A. Kumar, J. Mater. Sci. 26, 4924 (1991)
• 9. S. Mahadevan, A. Giridhar, J. Mater. Sci. 29, 3837 (1994)
• 10. A.A. Othman, K.A. Aly, A.M. Abousehly, Thin Solid Films 515, 507 (2007)
• 11. N.F. Mott, Philos. Mag. 34, 1101 (1976)
• 12. S.M. el-Sayed, G.A.M. Amin, Vacuum 62, 353 (2001)
• 13. V. Pandly, S.K. Tripathi, A. Kumar, Physica B 388, 200 (2007)
• 14. A.K. Sharma, K.L. Bhatia, J. Non-Cryst. Solids 109, 95 (1989)
• 15. A. Ghosh, Phys. Rev. B 42, 5665 (1990)
• 16. A.C. Warren, J.C. Male, Electron. Lett. 6, 567 (1970)
• 17. B. Tareev, Physics of Dielectric Materials, Mir, Moscow 1975, p. 42
• 18. S.R. Elliott, Philos. Mag. 36, 1291 (1977)
• 19. M.F. Kotkata, H.T. el-Shair, M.A. Afifi, M.M. Abdel Aziz, J. Appl. Phys. 27, 623 (1994)
• 20. R.M. Mehra, R. Shyam, P.C. Mathur, J. Non-Cryst. Solids 31, 435 (1979)
• 21. M.A. Afifi, N.A. Hegab, H.E. Atyia, M.I. Ismael, Vacuum 83, 326 (2009)
• 22. X.H. Leclerc, J. Phys. (France) 40, 27 (1979)
• 23. M. Kastener, H. Fritzsche, Philos. Mag. B 37, 199 (1978)
• 24. M. Kastener, in: Proc. 7th Int. Conf. of Amorphous and Liquid Semiconductors, Ed. W.E. Spear, Edinburgh University 1977, p. 504
• 25. S.R. Elliott, Solid State Commun. 27, 749 (1978)
• 26. C. Angell, Ann. Rev. Phys. Chem. 43, 693 (1992)
• 27. A.E. Bekheet, N.A. Hegab, Vacuum 83, 391 (2009)
• 28. M.A.M. Seyam, A.E. Bekheet, A. Elfalaky, Eur. Phys. 16, 99 (2001)
• 29. A.E. Streen, H. Eyring, J. Chem. Phys. 5, 113 (1937)
• 30. J.C. Giuntini, J.V. Zanchetta, D. Jullien, R. Enolie, P. Houenou, J. Non-Cryst. Solids 45, 57 (1981)
• 31. S.C. Agarwal, S. Guha, K.L. Narasimhan, J. Non-Cryst. Solids 18, 429 (1975)
• 32. M. Pollak, G.E. Pike, Phys. Rev. Lett. 25, 1449 (1972)
• 33. S. Asokan, M.V.M. Prassad, G. Parathasarathy, E.S.R. Gopal, Phys. Rev. Lett. 62, 808 (1989)
• 34. S. Abuo el-Hassan, M. Hammad, Phys. Status Solidi A 185, 2, 413 (2001)
• 35. M. Barsoum, Fundamentals of Ceramics, Mc Graw-Hill, New York 1977, p. 543
• 36. L. Pauling, The Nature of Chemical Bond, Cornell University, New York 1960
• 37. Nadeem Musahwar, M.A. Majeed Khan, M. Husain, M. Zulfequar, Physica B 396, 81 (2007)
• 38. J.M. Stevels, Handbuch der Physik, Ed. Flugge, Springer, Berlin 1957, p. 350
• 39. N.F. Mott, E.A. Davis, R.A. Streel, Philos. Mag. 32, 961 (1975)
• 40. M. Pollak, G.E. Pike, Phys. Rev. Lett. 28, 1494 (1972)

Identifiers

DOI

10.12693/APhysPolA.119.416