Barium Strontium Bismuth Niobate Layered Perovskites: Dielectric, Impedance and Electrical Modulus Characteristics

• Authors: M. Dasari , K. Sambasiva Rao , P. Murali Krishna , G. Gopala Krishna
• Languages of publication: EN

Abstracts

EN

SrBi_2Nb_2O_9 (SBN) is a bismuth layered perovskite compound, due to its relatively high Curie temperature, has potential application as high ceramic transducer. Also, it is an attractive ferroelectric material that is being considered in non-volatile random access memory cells. Present article describes preparation, dielectric, impedance and modulus characteristics. Temperature and frequency dependence of dielectric permittivity, impedance and electric modulus of barium strontium bismuth niobate (Ba_{0.1}Sr_{0.9}Bi_2Nb_2O_9, BSBN) have been studied in the range of 35-590°C and 45 Hz-5 MHz, respectively. The structural analysis of compound revealed orthorhombic at room temperature. Complex impedance Cole-Cole plots are used to interpret the relaxation mechanism. These plots shows the relaxation behavior as non-Debye type. By using the Cole-Cole plots grain and grain boundary contributions towards conductivity have been estimated. From electrical modulus formalism polarization and conductivity relaxation behavior in BSBN have been discussed. DC and AC conductivity measurements have been performed on BSBN.

Keywords

EN

77.84.-s; 77.84.Ek; 72.80.Ng

Discipline

• 77.84.-s: Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials(for nonlinear optical materials, see 42.70.Mp; for dielectric materials in electrochemistry, see 82.45.Un)
• 72.80.Ng: Disordered solids
• 77.84.Ek: Niobates and tantalates

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 3
• Pages: 387-394

Dates

published

2011-03

received

2010-09-19

(unknown)

2010-11-30

Contributors

author

M. Dasari

• Department of Physics, Gitam Institute of Technology, Gitam University, Visakhapatnam-530 045, India

author

K. Sambasiva Rao

• Centre for Piezoelectric Transducer Materials, Physics Department, Andhra University, Visakhapatnam-530 003, India

author

P. Murali Krishna

• Centre for Piezoelectric Transducer Materials, Physics Department, Andhra University, Visakhapatnam-530 003, India

author

G. Gopala Krishna

• Department of Physics, Gitam Institute of Technology, Gitam University, Visakhapatnam-530 045, India

References

• 1. B. Aurivillius, Arkh. Khemi 1, 499 (1950)
• 2. J.F. Scott, F.M. Ross, C.A. Paz de Araujo, M.C. Scott, M. Huffman, MRS Bulletin 21, 33 (1996)
• 3. I.M. Reancy, M. Roulin, H.S. Shulman, N. Setter, Ferroelectrics 165, 295 (1995)
• 4. Y. Xu, Ferroelectric Materials and Their Applications North-Holland, Amsterdam 1991
• 5. Y. Noguchi, M. Miyayama, Appl. Phys. Lett. 78, 1903 (2001)
• 6. K. Kato, C. Zheng, J.M. Finder, S.K. Dey, T. Torri, J. Am. Ceram. Soc. 81, 1869 (1998)
• 7. X. Du, I.W. Chen, J. Am. Ceram. Soc. 41, 3253 (1998)
• 8. S.H. Hwang, H.J. Chang, J. Korean Phys. Soc. 42, 139 (2003)
• 9. B.H. Park, B.S. Kang, S.B. Bu, T.W. Noh, J. Lee, W. Jo, Nature 401, 682 (1999)
• 10. I.W. Kim, C.W. Ahn, J.S. Kim, J.S. Bae, B.C. Choi, J.H. Jeong, J.S. Lee, Appl. Phys. Lett. 80, 4006 (2002)
• 11. P.C. Joshi, S.B. Krupanidhi, A. Mansingh, J. Appl. Phys. 72, 5517 (1992)
• 12. M. Villegas, A.C. Caballero, C. Moure, P. Durn, J.F. Fernadez, J. Eur. Ceram. Soc. 19, 1183 (1999)
• 13. J.F. Scott, Ferroelectric Memories, Springer, Berlin 2000
• 14. D. Dimos, W.L. Warren, H.N. Al-Shareef, in: Thin Film Ferroelectric Materials and Devices, Ed. R. Ramesh, Kluwer, Norwell, MA 1997, p. 199
• 15. E.C. Subba Rao, J. Am. Ceram. Soc. 45, 166 (1962)
• 16. G.A. Smolenskii, V.A. Isupov, A.I. Agranovskaya, Fiz. Tverd. Tela 3, 895 (1961)
• 17. E.C. Subba Rao, J. Phys. Chem. Solids 23, 665 (1962)
• 18. Lu Zhigao, J.P. Bonnet, J. Ravez, P. Hagenmuller, Solid State Ionics 57, 235 (1992)
• 19. T.A. Nealon, Ferroelectrics 76, 377 (1987)
• 20. A.K. Jonscher, R.M. Hill, C. Pickup, J. Mater. Sci. 20, 4431 (1985)
• 21. B. Roling, A. Happe, K. Funke, M.D. Ingram, Phys. Rev. Lett. 78, 2160 (1997)
• 22. F.E.G. Henn, J.C. Giuntini, J.V. Zanchetta, W. Granier, A. Taha, Solid State Ionics 42, 29 (1990)
• 23. J.C. Giuntini, B, Deroide, P. Belougne, J.V. Zanchetta, Solid State Commun. 62, 739 (1987)
• 24. Y. Bensimon, J.C. Giuntini, P. Belougne, B. Deroire, J.V. Zanchetta, Solid State Commun. 68, 189 (1988)
• 25. W.K. Lee, J.F. Liu, A.S. Nowick, Phys. Rev. Lett. 67, 1559 (1991)
• 26. A.K. Jonscher, Dielectric Relaxation in Solids, Chelsea-Dielectric Press, London 1983
• 27. Z. Lu, J.P. Bonnet, J. Ravez, P. Hagenmuller, Eur. J. Solid State Inorg. Chem 27, 363 (1991)
• 28. G. Williams, D.C. Watts, Trans. Fraday Soc. 23, 625 (1970)
• 29. K.L. Nagai, S.W. Martin, Phys. Rev. B 40, 10050 (1989)
• 30. F.S. Howell, R.A. Bose, P.B. Macedo, C.T. Moynihan, J. Phys. Chem. 78, 639 (1974)
• 31. J.M. Reqa, S. Rossignol, B. Tanguy, M.A. Paris, J.M. Rojo, J. Sanz, Solid State Ionics 80, 283 (1995)
• 32. N. Zouari, M. Mnif, H. Khemakhem, T. Mhiri, A. Daoud, Solid State Ionics 110, 269 (1998)
• 33. Lu. Zhigao, J.P. Bonnet, J. Ravez, J.M. Reau, P. Hagenmuller, Phys. Chem. Solids 53, 1 (1992)
• 34. P.B. Macedo, C.T. Moynihan, R. Bose, Phys. Chem. Glasses 13, 171 (1972)
• 35. C.A. Angell, Chem. Rev. 90, 523 (1990)
• 36. J.S. Kim, J. Phys. Soc. Jpn. 70, 3129 (2001)
• 37. R. Gerhardt, J. Phys. Chem. Solids 55, 1491 (1994)

Identifiers

DOI

10.12693/APhysPolA.119.387