Comparison of Ultrafast Photodetectors Based on N^+GaAs and LT GaAs

• Authors: M. Białous , R. Mogilinski , M. Wierzbicki , K. Świtkowski , B. Pura
• Languages of publication: EN

Abstracts

EN

We present investigation of a photodetector based on nitrogen-ion-implanted GaAs. Device photoresponse signal shows 1.15 ps FWHM (400 GHz, 3 dB bandwidth) with the voltage amplitude ≈ 1 mV, measured using a constructed electro-optic sampling setup with 80 fs width, 795 nm wavelength and laser pulses repetition rate of 80 MHz. Changes in the shape of electrical signal for different beam powers excitation and voltage biases have been demonstrated, compared with LT GaAs photodetector based on the same finger geometry. Using technique of X-ray diffraction and diffuse scattering analyses we have observed the decrease of lattice constant, radius of nanoclusters after implantation, respectively, and linear density dislocations increased over twice.

Keywords

EN

78.20.-e; 78.47.J-; 78.70.Ck

Discipline

• 78.70.Ck: X-ray scattering
• 78.47.J-: Ultrafast spectroscopy (<1>(see also 42.65.Re Ultrafast processes; optical pulse generation and pulse compression; 82.53.Mj Femtosecond probing of semiconductor nanostructures)
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 3
• Pages: 382-386

Dates

published

2011-03

received

2009-03-13

(unknown)

2010-11-22

Contributors

author

M. Białous

• Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

author

R. Mogilinski

• Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

author

M. Wierzbicki

• Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

author

K. Świtkowski

• Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

author

B. Pura

• Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

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Identifiers

DOI

10.12693/APhysPolA.119.382