Structural, Optical and Electrical Properties of Plasma Deposited Thin Films from Hexamethyldisilazane Compound

• Authors: S. Saloum , B. Alkhaled
• Languages of publication: EN

Abstracts

EN

Silicon organic thin films have been prepared by RF hollow cathode plasma chemical vapor deposition system, from hexamethyldisilazane (HMDSN) as the source compound, under different plasma conditions, namely feed gas and applied RF power. The feed gas has been changed from argon to nitrogen, and the power has been varied between 100 W and 300 W in N_2/HMDSN plasma. The structural properties of the deposited films have been investigated by the Fourier transform infrared spectroscopy technique. Spectrophotometry measurements have been used to determine films optical constants (refractive index, dielectric constant and energy band gap); in addition, the photoluminescence from these films has been recorded. The electrical resistivity of films has been estimated from the measurements of current-voltage characteristics of deposited thin films. The effect of the different plasma conditions on these structural, optical and electrical properties of the prepared thin films, as well as the correlation between the different properties are reported.

Keywords

EN

52.77.Dq; 81.15.Gh; 73.20.At; 78.20.Ci; 84.37.+q

Discipline

• 84.37.+q: Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
• 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 73.20.At: Surface states, band structure, electron density of states
• 52.77.Dq: Plasma-based ion implantation and deposition(see also 81.15.Jj Ion and electron beam-assisted deposition)

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 3
• Pages: 369-373

Dates

published

2011-03

received

2010-05-02

(unknown)

2010-11-23

Contributors

author

S. Saloum

• Atomic Energy Commission of Syria (AECS), Physics Department, P.O. Box 6091, Damascus, Syria

author

B. Alkhaled

• Atomic Energy Commission of Syria (AECS), Physics Department, P.O. Box 6091, Damascus, Syria

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Identifiers

DOI

10.12693/APhysPolA.119.369