Characterization of Optical and Photoelectrical Properties of ZnO Crystals

• Authors: P. Onufrijevs , T. Serevičius , P. Scajev , G. Manolis , A. Medvids , L. Chernyak , E. Kuokstis , C. Yang , K. Jarasiunas
• Languages of publication: EN

Abstracts

EN

We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination.

Keywords

EN

78.15.+e; 78.45.+h; 78.30.Fs

Discipline

• 78.45.+h: Stimulated emission(see also 42.55.-f Lasers)
• 78.15.+e: Optical properties of fluid materials, supercritical fluids and liquid crystals(for reactions in supercritical fluids, see 82.33.De)
• 78.30.Fs: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 274-276

Dates

published

2011-02

Contributors

author

P. Onufrijevs

• Institute of Applied Research, Vilnius University, Saulėtekio al. 9-III, LT 10222, Vilnius, Lithuania
• Institute of Technical Physics, Riga Technical University, 14, Azenes Str., LV-1048, Riga, Latvia

author

T. Serevičius

• Institute of Applied Research, Vilnius University, Saulėtekio al. 9-III, LT 10222, Vilnius, Lithuania

author

P. Scajev

• Institute of Applied Research, Vilnius University, Saulėtekio al. 9-III, LT 10222, Vilnius, Lithuania

author

G. Manolis

• Institute of Applied Research, Vilnius University, Saulėtekio al. 9-III, LT 10222, Vilnius, Lithuania

author

A. Medvids

• Institute of Technical Physics, Riga Technical University, 14, Azenes Str., LV-1048, Riga, Latvia

author

L. Chernyak

• Physics Department, University of Central Florida, 4000 Central Florida Blvd., Orlando, Florida, 32816, USA

author

E. Kuokstis

• Institute of Applied Research, Vilnius University, Saulėtekio al. 9-III, LT 10222, Vilnius, Lithuania

author

C. Yang

• Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Taipei, Taiwan

author

K. Jarasiunas

• Institute of Applied Research, Vilnius University, Saulėtekio al. 9-III, LT 10222, Vilnius, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.119.274