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2011 | 119 | 2 | 274-276
Article title

Characterization of Optical and Photoelectrical Properties of ZnO Crystals

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EN
Abstracts
EN
We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination.
Keywords
EN
Contributors
author
  • Institute of Applied Research, Vilnius University, Saulėtekio al. 9-III, LT 10222, Vilnius, Lithuania
  • Institute of Technical Physics, Riga Technical University, 14, Azenes Str., LV-1048, Riga, Latvia
  • Institute of Applied Research, Vilnius University, Saulėtekio al. 9-III, LT 10222, Vilnius, Lithuania
author
  • Institute of Applied Research, Vilnius University, Saulėtekio al. 9-III, LT 10222, Vilnius, Lithuania
author
  • Institute of Applied Research, Vilnius University, Saulėtekio al. 9-III, LT 10222, Vilnius, Lithuania
author
  • Institute of Technical Physics, Riga Technical University, 14, Azenes Str., LV-1048, Riga, Latvia
author
  • Physics Department, University of Central Florida, 4000 Central Florida Blvd., Orlando, Florida, 32816, USA
author
  • Institute of Applied Research, Vilnius University, Saulėtekio al. 9-III, LT 10222, Vilnius, Lithuania
author
  • Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Taipei, Taiwan
author
  • Institute of Applied Research, Vilnius University, Saulėtekio al. 9-III, LT 10222, Vilnius, Lithuania
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n257kz
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