Doping Dependence of Spin Dynamics of Drifting Electrons in GaAs Bulks

• Authors: S. Spezia , D. Persano Adorno , N. Pizzolato , B. Spagnolo
• Languages of publication: EN

Abstracts

EN

We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in an n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a semiclassical Monte Carlo approach, which takes into account the intravalley scattering mechanisms of warm electrons in the semiconductor material. Spin relaxation is considered through the D'yakonov-Perel mechanism, which is the dominant mechanism in III-V semiconductors. The evolution of spin polarization is analyzed by computing lifetimes and depolarization lengths as a function of the doping density in the range 10^{13} ÷ 5 × 10^{16} cm^{-3}, for different values of the amplitude of the static electric field (0.1 ÷ 1.0 kV/cm). We find an increase of the electron spin lifetime as a function of the doping density, more evident for lattice temperatures lower than 150 K. Moreover, at very low intensities of the driving field, the spin depolarization length shows a nonmonotonic behaviour with the density. At the room temperature, spin lifetimes and depolarization lengths are nearly independent on the doping density. The underlying physics is analyzed.

Keywords

EN

71.70.Ej; 72.25.Dc; 72.25.Rb

Discipline

• 72.25.Dc: Spin polarized transport in semiconductors
• 72.25.Rb: Spin relaxation and scattering
• 71.70.Ej: Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 250-252

Dates

published

2011-02

Contributors

author

S. Spezia

• Dipartimento di Fisica e Tecnologie Relative, Group of Interdisciplinary Physics, Università di Palermo and CNISM, Viale delle Scienze, edificio 18, I-90128 Palermo, Italy

author

D. Persano Adorno

• Dipartimento di Fisica e Tecnologie Relative, Group of Interdisciplinary Physics, Università di Palermo and CNISM, Viale delle Scienze, edificio 18, I-90128 Palermo, Italy

author

N. Pizzolato

• Dipartimento di Fisica e Tecnologie Relative, Group of Interdisciplinary Physics, Università di Palermo and CNISM, Viale delle Scienze, edificio 18, I-90128 Palermo, Italy

author

B. Spagnolo

• Dipartimento di Fisica e Tecnologie Relative, Group of Interdisciplinary Physics, Università di Palermo and CNISM, Viale delle Scienze, edificio 18, I-90128 Palermo, Italy

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Identifiers

DOI

10.12693/APhysPolA.119.250