LO-Phonon Band Filling by Means of Charge Carriers Accelerated in Electric Fields

• Authors: R. Raguotis , R. Brazis
• Languages of publication: EN

Abstracts

EN

Electron and phonon distribution in momentum space is modeled using Monte Carlo method. Calculated LO phonon distribution in zinc-blende GaN deviates dramatically from the thermal equilibrium (Planck) function, and well coincides with the phonon number elucidated from the existing anti-Stokes Raman scattering experiments.

Keywords

EN

78.45.+h; 78.30.-j; 42.55.-f; 72.10.-d; 72.20.Ht

Discipline

• 78.45.+h: Stimulated emission(see also 42.55.-f Lasers)
• 72.20.Ht: High-field and nonlinear effects
• 42.55.-f: Lasers
• 78.30.-j: Infrared and Raman spectra(for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd)
• 72.10.-d: Theory of electronic transport; scattering mechanisms

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 247-249

Dates

published

2011-02

Contributors

author

R. Raguotis

• Semiconductor Physics Institute of the Center for Physical Sciences and Technology, A. Goštauto g. 11, LT 01108 Vilnius, Lithuania

author

R. Brazis

• Semiconductor Physics Institute of the Center for Physical Sciences and Technology, A. Goštauto g. 11, LT 01108 Vilnius, Lithuania

References

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Identifiers

DOI

10.12693/APhysPolA.119.247