Optical and Electrical Noise Characteristics of Side Emitting LEDs

• Authors: B. Šaulys , V. Kornijčuk , J. Matukas , V. Palenskis , S. Pralgauskaitė , K. Glemža
• Languages of publication: EN

Abstracts

EN

Low frequency noise characteristics of nitride based blue side emitting diodes have been investigated. It is shown that investigated devices distinguish by 1/f^α-type optical and electrical fluctuations caused by various generation-recombination processes through defects formed generation-recombination centers. At higher frequencies optical shot noise due to random photon emission prevails 1/f^α-type spectrum. The results have shown that low frequency optical and electrical noises are strongly correlated at small current region, but at higher forward current not correlated noise components dominate. Lenses and secondary optics of the investigated devices do not influence output light.

Keywords

EN

72.70.+m; 74.40.-n; 85.60.Jb

Discipline

• 74.40.-n: Fluctuation phenomena
• 72.70.+m: Noise processes and phenomena
• 85.60.Jb: Light-emitting devices

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 244-246

Dates

published

2011-02

Contributors

author

B. Šaulys

• Radiophysics Dep., Vilnius University, Saulėtekio 9 (III), 10222 Vilnius, Lithuania

author

V. Kornijčuk

• Radiophysics Dep., Vilnius University, Saulėtekio 9 (III), 10222 Vilnius, Lithuania

author

J. Matukas

• Radiophysics Dep., Vilnius University, Saulėtekio 9 (III), 10222 Vilnius, Lithuania

author

V. Palenskis

• Radiophysics Dep., Vilnius University, Saulėtekio 9 (III), 10222 Vilnius, Lithuania

author

S. Pralgauskaitė

• Radiophysics Dep., Vilnius University, Saulėtekio 9 (III), 10222 Vilnius, Lithuania

author

K. Glemža

• Theoretical Physics Dep., Vilnius University, Saulėtekio 9 (III), 10222 Vilnius, Lithuania

References

• 1. H.Y. Ryu, T. Sakong, J.K. Son, Electron. Lett. 45, 1318 (2009)
• 2. H.J. Chung, R.J. Choi, M.H. Kim, J.W. Han, Y.M. Park, Y.S. Kim, H.S. Paek, C.S. Sone, Y.J. Park, J.K. Kim, E.F. Schubert, Appl. Phys. Lett. 95, 241109 (2009)
• 3. Y.-J. Lee, H.-C. Kuo, T.-C. Lu, S.-C. Wang, K.W. Ng, K.M. Lau, Z.-P. Yang, A.S.-P. Chang, S.-Y. Lin, J. Light. Technol. 26, 1455 (2008)
• 4. D. Ursutiu, B.K. Jones, Semicond. Sci. Technol. 11, 1133 (1996)
• 5. S. Pralgauskaite, V. Palenskis, J. Matukas, J. Petrulis, G. Kurilcik, Fluct. Noise Lett. 7, L367 (2007)
• 6. V. Palenskis, J. Matukas, S. Pralgauskaitė, B. Šaulys, Fluct. Noise Lett. 9, 179 (2010)
• 7. B.K. Jones, Electron. Electron Phys. 87, 201 (1994)

Identifiers

DOI

10.12693/APhysPolA.119.244