Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl

PL EN


Preferences help
enabled [disable] Abstract
Number of results
2011 | 119 | 2 | 241-243

Article title

Terahertz Radiation Emission by Hot Electrons from AlGaN/GaN Heterostructure

Content

Title variants

Languages of publication

EN

Abstracts

EN
In the present paper we report on the observation and study of intense spontaneous THz emission from modulation-doped AlGaN/GaN heterostructure under conditions of heating of two-dimensional electron gas in lateral electric field. The experimental results are compared with the model of blackbody-like thermal emission of hot 2D electrons. Complementary transport measurements and theoretical simulation were carried out to determine the dependence of effective electron temperature on electric field. The role of non-equilibrium optical phonon accumulation is discussed.

Keywords

EN

Contributors

author
  • St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia
author
  • St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia
author
  • St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia
author
  • St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia
author
  • St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia
author
  • Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia
author
  • Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia
author
  • Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia
  • Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia

References

  • 1. E. Starikov, P. Shiktorov, V. Gružinskis, L. Varani, C. Palermo, J.-F. Millithaler, L. Reggiani, J. Phys., Condens. Matter 20, 384209 (2008)
  • 2. A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M.A. Poisson, S. Delage, P. Prystawko, C. Skierbiszewski, J. Appl. Phys. 107, 024504 (2010)
  • 3. V.A. Shalygin, L.E. Vorobjev, D.A. Firsov, V.Yu. Panevin, A.N. Sofronov, G.A. Melentyev, A.V. Antonov, V.I. Gavrilenko, A.V. Andrianov, A.O. Zakharyin, S. Suihkonen, P.T. Törmä, M. Ali, H. Lipsanen, J. Appl. Phys. 106, 123523 (2009)
  • 4. W.V. Lundin, A.V. Sakharov, A.F. Tsatsulnikov, V.M. Ustinov, Semicond. Sci. Technol. 26, 014039 (2011)
  • 5. M. Shur, B. Gelmont, M. Asif Khan, J. Electron. Mater. 25, 777 (1996)
  • 6. Z. Dziuba, J. Antoszewski, J.M. Dell, L. Faraone, P. Kozodoy, S. Keller, B. Keller, S.P. DenBaars, U.K. Mishra, J. Appl. Phys. 82, 2996 (1997)
  • 7. K. Hirakawa, M. Grayson, D.C. Tsui, C. Kurdak, Phys. Rev. B 47, 16651 (1993)
  • 8. Cz. Jasiukiewicz, V. Karpus, Semicond. Sci. Technol. 11, 1777 (1996)
  • 9. K. Hirakawa, H. Sakaki, Phys. Rev. B 33, 8291 (1986)
  • 10. A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, A.V. Naumov, A.E. Belyaev, J. Appl. Phys. 105, 073703 (2009)
  • 11. K.T. Tsen, R.P. Joshi, D.K. Ferry, A. Botchkarev, B. Sverdlov, A. Salvador, H. Morkoc, Appl. Phys. Lett. 68, 2990 (1996)

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv119n246kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.