Terahertz Radiation Emission by Hot Electrons from AlGaN/GaN Heterostructure

• Authors: V. Shalygin , L. Vorobjev , D. Firsov , A. Sofronov , G. Melentyev , W. Lundin , A. Nikolaev , A. Sakharov , A. Tsatsulnikov
• Languages of publication: EN

Abstracts

EN

In the present paper we report on the observation and study of intense spontaneous THz emission from modulation-doped AlGaN/GaN heterostructure under conditions of heating of two-dimensional electron gas in lateral electric field. The experimental results are compared with the model of blackbody-like thermal emission of hot 2D electrons. Complementary transport measurements and theoretical simulation were carried out to determine the dependence of effective electron temperature on electric field. The role of non-equilibrium optical phonon accumulation is discussed.

Keywords

EN

73.50.Dn; 73.50.Fq; 78.60.Fi

Discipline

• 73.50.Dn: Low-field transport and mobility; piezoresistance
• 78.60.Fi: Electroluminescence
• 73.50.Fq: High-field and nonlinear effects

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 241-243

Dates

published

2011-02

Contributors

author

V. Shalygin

• St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia

author

L. Vorobjev

• St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia

author

D. Firsov

• St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia

author

A. Sofronov

• St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia

author

G. Melentyev

• St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia

author

W. Lundin

• Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia

author

A. Nikolaev

• Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia

author

A. Sakharov

• Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia

author

A. Tsatsulnikov

• Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia

References

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Identifiers

DOI

10.12693/APhysPolA.119.241