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2011 | 119 | 2 | 237-240
Article title

Peculiarities of High Power Infrared Detection on Narrow-Gap Semiconductor p-n Junctions

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EN
Abstracts
EN
We report on experimental results of photosignal investigation in HgCdTe, InSb and PbTe semiconductor p-n junctions under the action of an intense pulsed CO_2 laser. The influence of laser power, external bias voltage as well as the diode temperature on the photosignal formation has been studied. We show that under certain conditions both classical photovoltaic and hot carrier phenomena may act simultaneously within a junction thus strongly impacting on responsivity and speed of operation of the device. The drawn conclusions may be of great importance for the development of high power optoelectronic devices.
Keywords
Contributors
author
  • Semiconductor Physics Institute of the Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania
  • Vilnius Gediminas Technical University, Saulėtekio av. 11, Vilnius 10223, Lithuania
author
  • Semiconductor Physics Institute of the Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania
author
  • Semiconductor Physics Institute of the Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania
  • Semiconductor Physics Institute of the Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania
  • Vilnius Gediminas Technical University, Saulėtekio av. 11, Vilnius 10223, Lithuania
author
  • Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel
author
  • Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n245kz
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