Peculiarities of High Power Infrared Detection on Narrow-Gap Semiconductor p-n Junctions

• Authors: J. Gradauskas , E. Širmulis , S. Ašmontas , A. Sužiedėlis , Z. Dashevsky , V. Kasiyan
• Languages of publication: EN

Abstracts

EN

We report on experimental results of photosignal investigation in HgCdTe, InSb and PbTe semiconductor p-n junctions under the action of an intense pulsed CO_2 laser. The influence of laser power, external bias voltage as well as the diode temperature on the photosignal formation has been studied. We show that under certain conditions both classical photovoltaic and hot carrier phenomena may act simultaneously within a junction thus strongly impacting on responsivity and speed of operation of the device. The drawn conclusions may be of great importance for the development of high power optoelectronic devices.

Keywords

EN

78.56.-a; 78.70.-g; 84.60.Jt; 85.60.Dw

Discipline

• 85.60.Dw: Photodiodes; phototransistors; photoresistors
• 78.56.-a: Photoconduction and photovoltaic effects(for photoconduction and photovoltaic effects in bulk matter and thin films, see 72.40.+w and 73.50.Pz, respectively; see also 84.60.Jt Photoelectric conversion; for solar cells, see 88.40.H- and 88.40.J- in Solar energy)
• 78.70.-g: Interactions of particles and radiation with matter
• 84.60.Jt: Photoelectric conversion(for solar cells, see 88.40.H- and 88.40.J- in renewable energy resources; for solar collectors and concentrators, see 42.79.Ek in optics and 88.40.F- in renewable energy resources)

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 237-240

Dates

published

2011-02

Contributors

author

J. Gradauskas

• Semiconductor Physics Institute of the Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania
• Vilnius Gediminas Technical University, Saulėtekio av. 11, Vilnius 10223, Lithuania

author

E. Širmulis

• Semiconductor Physics Institute of the Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania

author

S. Ašmontas

• Semiconductor Physics Institute of the Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania

author

A. Sužiedėlis

• Semiconductor Physics Institute of the Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania
• Vilnius Gediminas Technical University, Saulėtekio av. 11, Vilnius 10223, Lithuania

author

Z. Dashevsky

• Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel

author

V. Kasiyan

• Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel

References

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Identifiers

DOI

10.12693/APhysPolA.119.237