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2011 | 119 | 2 | 231-233
Article title

Hot-Phonon Decided Carrier Velocity in AlInN/GaN Based Two-Dimensional Channels

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EN
Abstracts
EN
Nanosecond-pulsed measurements of hot-electron transport were performed for a nominally undoped two-dimensional channel confined in a slightly strained Al_{0.8}In_{0.2}N/AlN/GaN and nearly lattice matched Al_{0.84}In_{0.16}N/AlN/GaN heterostructures at room temperature. No current saturation is reached because we minimized the effect of the Joule heating. The electron drift velocity is deduced under assumption of uniform electric field and field-independent electron density. The estimated drift velocity ≈ 1.5 × 10^7 cm/s at 140 kV/cm bodes well with the value of hot-phonon lifetime exceeding 0.1 ps.
Keywords
EN
Publisher

Year
Volume
119
Issue
2
Pages
231-233
Physical description
Dates
published
2011-02
Contributors
  • Fluctuation Research Laboratory, Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania
  • Fluctuation Research Laboratory, Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania
author
  • Fluctuation Research Laboratory, Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania
References
  • 1. H. Morkoç, Handbook of Nitride Semiconductor Devices, Wiley-VCH, Berlin 2008
  • 2. J. Kuzmik, G. Pozzovivo, C. Ostermaier, G. Strasser, D. Pogany, E. Gornik, J.-F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, J. Appl. Phys. 106, 124503 (2009)
  • 3. J.H. Leach, M. Wu, X. Ni, X. Li, Ü. Özgür, H. Morkoç, Phys. Status Solidi A 207, 211 (2010)
  • 4. H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennegues, A.D. Dräger, A. Hangleiter, Appl. Phys. Lett. 93, 081116 (2008)
  • 5. O. Malis, C. Edmunds, M.J. Manfra, D.L. Sivco, Appl. Phys. Lett. 94, 161111 (2009)
  • 6. J. Kuzmik, IEEE Electron Dev. Lett. 22, 510 (2001)
  • 7. J. Xie, X. Ni, M. Wu, J.H. Leach, Ü. Özgür, H. Morkoç, Appl. Phys. Lett. 91, 132116 (2007)
  • 8. J.H. Leach, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morkoç, T. Paskova, E. Preble, K.R. Evans, Chang-Zhi Lu, Appl. Phys. Lett. 96, 102109 (2010)
  • 9. L. Ardaravičius, M. Ramonas, J. Liberis, O. Kiprijanovič, A. Matulionis, J. Xie, M. Wu, J.H. Leach, H. Morkoç, J. Appl. Phys. 106, 073708 (2009)
  • 10. L. Ardaravičius, J. Liberis, O. Kiprijanovič, M. Ramonas, A. Matulionis, J. Xie, M. Wu, J.H. Leach, H. Morkoç, Phys. Status Solidi C 6, 2635 (2009)
  • 11. A. Matulionis, Phys. Status Solidi A 203, 2313 (2006)
  • 12. J. Khurgin, Y.J. Ding, D. Jena, Appl. Phys. Lett. 91, 252104 (2007)
  • 13. B.K. Ridley, J. Phys., Condens. Matter 8, L511 (1996)
  • 14. A. Matulionis, Phys. Status Solidi C 6, 2834 (2009)
  • 15. A. Matulionis, J. Liberis, I. Matulionienė, M. Ramonas, E. Šermukšnis, J.H. Leach, M. Wu, X. Ni, X. Li, H. Morkoç, Appl. Phys. Lett. 95, 192102 (2009)
  • 16. A. Matulionis, J. Liberis, E. Šermuksnis, J. Xie, J.H. Leach, M. Wu, H. Morkoç, Semicond. Sci. Technol. 23, 075048 (2008)
  • 17. A. Matulionis, J. Liberis, I. Matulionienė, M. Ramonas, E. Šermukšnis, Proc. IEEE 98, 1118 (2010)
  • 18. A. Matulionis, J. Liberis, I. Matulionienė, M. Ramonas, L.F. Eastman, J.R. Shealy, V. Tilak, A. Vertiatchikh, Phys. Rev. B 68, 035338 (2003)
  • 19. L. Ardaravičius, M.J. Kelly, M. Kappers, O. Kiprijanovič, S. Whelan, Lithuanian J. Phys. 49, 63 (2009)
  • 20. J.M. Barker, D.K. Ferry, S.M. Goodnick, D.D. Koleske, A. Allerman, R.J. Shul, J. Vac. Sci. Technol. B 22, 2045 (2004)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n243kz
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