Hot-Phonon Decided Carrier Velocity in AlInN/GaN Based Two-Dimensional Channels

• Authors: L. Ardaravičius , O. Kiprijanovič , J. Liberis
• Languages of publication: EN

Abstracts

EN

Nanosecond-pulsed measurements of hot-electron transport were performed for a nominally undoped two-dimensional channel confined in a slightly strained Al_{0.8}In_{0.2}N/AlN/GaN and nearly lattice matched Al_{0.84}In_{0.16}N/AlN/GaN heterostructures at room temperature. No current saturation is reached because we minimized the effect of the Joule heating. The electron drift velocity is deduced under assumption of uniform electric field and field-independent electron density. The estimated drift velocity ≈ 1.5 × 10^7 cm/s at 140 kV/cm bodes well with the value of hot-phonon lifetime exceeding 0.1 ps.

Keywords

EN

73.50.Fq; 73.40.Kp

Discipline

• 73.50.Fq: High-field and nonlinear effects
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 231-233

Dates

published

2011-02

Contributors

author

L. Ardaravičius

• Fluctuation Research Laboratory, Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania

author

O. Kiprijanovič

• Fluctuation Research Laboratory, Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania

author

J. Liberis

• Fluctuation Research Laboratory, Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.119.231