Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay

• Authors: A. Matulionis , J. Liberis , I. Matulionienė , E. Šermukšnis , J. Leach , M. Wu , X. Ni , H. Morkoç
• Languages of publication: EN

Abstracts

EN

Lifetime of non-equilibrium (hot) phonons in biased GaN heterostructures with two-dimensional electron gas channels was estimated from hot-electron fluctuations. Dependence of the lifetime on the electron density is not monotonous - the resonance-type fastest decay serves as a signature of hot phonons. The signature is resolved in nitride heterostructure field effect transistors when the gate voltage is used to change the channel electron density. The transistor cut-off frequency decreases on both sides of the resonance in agreement with the enhanced electron scattering caused by longer hot-phonon lifetimes. The signature is also noted in device reliability experiment: the enhanced temperature of hot phonons, possibly, triggers formation of new defects and accelerates device degradation.

Keywords

EN

72.70.+m; 73.50.Fq; 73.61.Ey

Discipline

• 72.70.+m: Noise processes and phenomena
• 73.61.Ey: III-V semiconductors
• 73.50.Fq: High-field and nonlinear effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 225-227

Dates

published

2011-02

Contributors

author

A. Matulionis

• Semiconductor Physics Institute, Centre for Physical Sciences and Technology, Vilnius, Lithuania

author

J. Liberis

• Semiconductor Physics Institute, Centre for Physical Sciences and Technology, Vilnius, Lithuania

author

I. Matulionienė

• Semiconductor Physics Institute, Centre for Physical Sciences and Technology, Vilnius, Lithuania

author

E. Šermukšnis

• Semiconductor Physics Institute, Centre for Physical Sciences and Technology, Vilnius, Lithuania

author

J. Leach

• Department of Electrical and Computer Engineering, Virginia Commonwealth University, VA, USA

author

M. Wu

• Department of Electrical and Computer Engineering, Virginia Commonwealth University, VA, USA

author

X. Ni

• Department of Electrical and Computer Engineering, Virginia Commonwealth University, VA, USA

author

H. Morkoç

• Department of Electrical and Computer Engineering, Virginia Commonwealth University, VA, USA

References

• 1. H. Morkoç, Handbook of Nitride Semiconductors and Devices, Vol. 3. Wiley-VCH, Weinheim 2009
• 2. J.H. Leach, H. Morkoç, Proc. IEEE 98, 1127 (2010)
• 3. A. Matulionis, J. Liberis, I. Matulionienė, M. Ramonas, E. Šermukšnis, Proc. IEEE 98, 1128 (2010)
• 4. A. Matulionis, Phys. Status Solidi C 6, 2834 (2009)
• 5. B.K. Ridley, J. Phys., Condens. Matter 8, L511 (1996)
• 6. K.T. Tsen, J.G. Kiang, D.K. Ferry, H. Morkoç, Appl. Phys. Lett. 89, 112111 (2006)
• 7. A. Dyson, B.K. Ridley, J. Appl. Phys. 103, 114507 (2008)
• 8. A. Matulionis, J. Liberis, I. Matulionienė, M. Ramonas, L.F. Eastman, J.R. Shealy, V. Tilak, A. Vertiatchikh, Phys. Rev. B 68, 035338 (2003)
• 9. A. Matulionis, J. Liberis, I. Matulionienė, M. Ramonas, E. Šermukšnis, J.H. Leach, M. Wu, X. Ni, X. Li, H. Morkoç, Appl. Phys. Lett. 95, 192102 (2009)
• 10. Z. Wang, K. Reimann, M. Woerner, T. Elsaesser, D. Hofstetter, J. Hwang, W.J. Schaff, L.F. Eastman, Phys. Rev. Lett. 94, 037403 (2005)
• 11. A. Matulionis, J. Liberis, H. Morkoç, Proc. SPIE 7602, 76020H (2010)
• 12. A. Matulionis, J. Liberis, I. Matulionienė, E. Šermukšnis, J.H. Leach, H. Morkoç, in: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt/Seeheim (Germany), 2010, p. 191
• 13. J.H. Leach, M. Wu, X. Ni, J. Lee, Ü. Özgür, H. Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, H. Cheng, Ç. Kurdak, Appl. Phys. Lett. 95, 223504 (2009)
• 14. J.H. Leach, M. Wu, X. Ni, X. Li, Ü. Özgür, H. Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, H. Cheng, Ç. Kurdak, Y.-T. Moon, Phys. Status Solidi A 207, 1345 (2010)
• 15. J.H. Leach, C.Y. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, T. Paskova, E. Preble, K.R. Evans, Appl. Phys. Lett. 96, 133505 (2010)

Identifiers

DOI

10.12693/APhysPolA.119.225