Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors

• Authors: B. Vasallo , H. Rodilla , T. González , E. Lefebvre , G. Moschetti , J. Grahn , J. Mateos
• Languages of publication: EN

Abstracts

EN

We perform a physical analysis of the kink effect in InAs/AlSb high electron mobility transistors by means of a semiclassical 2D ensemble Monte Carlo simulator. Due to the small bandgap of InAs, InAs/AlSb high electron mobility transistors are very susceptible to suffer from impact ionization processes, with the subsequent hole transport through the structure, both implicated in the kink effect. When the drain-to-source voltage V_{DS} is high enough for the onset of impact ionization, holes generated tend to pile up at the gate-drain side of the buffer. This occurs due to the valence-band energy barrier between the buffer and the channel. Because of this accumulation of positive charge, the channel is further opened and the drain current I_{D} increases, leading to the kink effect in the I-V characteristics.

Keywords

EN

85.30.De; 85.30.Tv

Discipline

• 85.30.De: Semiconductor-device characterization, design, and modeling
• 85.30.Tv: Field effect devices

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 222-224

Dates

published

2011-02

Contributors

author

B. Vasallo

• Dpto. Física Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca, Spain

author

H. Rodilla

• Dpto. Física Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca, Spain

author

T. González

• Dpto. Física Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca, Spain

author

E. Lefebvre

• Osram Semiconductor, Regensburg, Germany

author

G. Moschetti

• Department of Microtechnology and Nanoscience - MC2, Chalmers, University of Technology, SE-412 96 Göteborg, Sweden

author

J. Grahn

• Department of Microtechnology and Nanoscience - MC2, Chalmers, University of Technology, SE-412 96 Göteborg, Sweden

author

J. Mateos

• Dpto. Física Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca, Spain

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Identifiers

DOI

10.12693/APhysPolA.119.222