Monte Carlo Simulation of Noise and THz Generation in InP FET at Excess of Electrons in Channel

• Authors: V. Gružinskis , P. Shiktorov , E. Starikov
• Languages of publication: EN

Abstracts

EN

Electron transport and drain current noise in field effect transistor with n^+ nn^+ InP channel have been studied by Monte Carlo particle simulation which simultaneously solves the Boltzmann transport and pseudo-2D Poisson equations. It is shown that at gate voltages giving excess electron concentration in n-region of channel the drain current self-oscillations in THz frequency range are possible. The self-oscillations are driven by electron plasma instability.

Keywords

EN

72.20.Ht; 72.30.+q

Discipline

• 72.20.Ht: High-field and nonlinear effects
• 72.30.+q: High-frequency effects; plasma effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 215-217

Dates

published

2011-02

Contributors

author

V. Gružinskis

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

P. Shiktorov

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

E. Starikov

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania

References

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• 2. V.I. Ryzhij, N.A. Bannov, V.A. Fedirko, Fiz. Tekhn. Poluprovod. 18, 789 (1984)
• 3. V. Gružinskis, P. Shiktorov, E. Starikov, Acta Phys. Pol. A 113, 947 (2008)
• 4. P. Shiktorov, E. Starikov, V. Gružinskis, L. Varani, G. Sabatini, H. Marinchio, L. Reggiani, J. Stat. Mech., P01047 (2009)
• 5. K. Brennan, K. Hess, Solid-State Electron. 27, 347 (1984)

Identifiers

DOI

10.12693/APhysPolA.119.215