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2011 | 119 | 2 | 215-217
Article title

Monte Carlo Simulation of Noise and THz Generation in InP FET at Excess of Electrons in Channel

Content
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Languages of publication
EN
Abstracts
EN
Electron transport and drain current noise in field effect transistor with n^+ nn^+ InP channel have been studied by Monte Carlo particle simulation which simultaneously solves the Boltzmann transport and pseudo-2D Poisson equations. It is shown that at gate voltages giving excess electron concentration in n-region of channel the drain current self-oscillations in THz frequency range are possible. The self-oscillations are driven by electron plasma instability.
Keywords
EN
Publisher

Year
Volume
119
Issue
2
Pages
215-217
Physical description
Dates
published
2011-02
Contributors
  • Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania
author
  • Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania
author
  • Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania
References
  • 1. M. Dyakonov, M. Shur, Phys. Rev. Lett. 71, 2465 (1993)
  • 2. V.I. Ryzhij, N.A. Bannov, V.A. Fedirko, Fiz. Tekhn. Poluprovod. 18, 789 (1984)
  • 3. V. Gružinskis, P. Shiktorov, E. Starikov, Acta Phys. Pol. A 113, 947 (2008)
  • 4. P. Shiktorov, E. Starikov, V. Gružinskis, L. Varani, G. Sabatini, H. Marinchio, L. Reggiani, J. Stat. Mech., P01047 (2009)
  • 5. K. Brennan, K. Hess, Solid-State Electron. 27, 347 (1984)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n238kz
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