Efficient Terahertz Emission from InGaN/GaN Heterostructure

• Authors: A. Reklaitis
• Languages of publication: EN

Abstracts

EN

Terahertz emission from the freestanding InGaN/GaN heterostructure illuminated by femtosecond optical pulse is considered using Monte Carlo simulations. The results of Monte Carlo simulations show that the power of terahertz emission from InGaN/GaN heterostructure exceeds the power of the emission from InN surface by one order of magnitude.

Keywords

EN

42.72.Ai   73.20.Mf   75.70.-i   78.20.Bh   78.47.-p  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 212-214

Dates

published

2011-02

References

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Identifiers

DOI

10.12693/APhysPolA.119.212