PL EN


Preferences help
enabled [disable] Abstract
Number of results
2011 | 119 | 2 | 212-214
Article title

Efficient Terahertz Emission from InGaN/GaN Heterostructure

Authors
Content
Title variants
Languages of publication
EN
Abstracts
EN
Terahertz emission from the freestanding InGaN/GaN heterostructure illuminated by femtosecond optical pulse is considered using Monte Carlo simulations. The results of Monte Carlo simulations show that the power of terahertz emission from InGaN/GaN heterostructure exceeds the power of the emission from InN surface by one order of magnitude.
Keywords
Contributors
author
  • Semiconductor Physics Institute, Centre for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
References
  • 1. Terahertz Optoelectronics, Ed. K. Sakai, Springer, Berlin 2005
  • 2. A. Reklaitis, Phys. Rev. B 77, 153309 (2008)
  • 3. A. Reklaitis, Phys. Rev. B 74, 165305 (2006)
  • 4. A. Reklaitis, J. Phys., Condens. Matter 20, 384202 (2008)
  • 5. I. Vurgaftman, J.R. Meyer, J. Appl. Phys. 94, 3675 (2003)
  • 6. I. Mahboob, T.D. Veal, C.F. McConville, H. Lu, W.J. Schaff, Phys. Rev. Lett. 92, 036804 (2004)
  • 7. I. Mahboob, T.D. Veal, L.F.J. Pipper, C.F. McConville, H. Lu, W.J. Schaff, J. Furthmüller, F. Bechstedt, Phys. Rev. B 69, R201307 (2004)
  • 8. J. Wu, W. Walukiewicz, S.X. Li, R. Armitage, J.C. Ho, E.R. Weber, E.E. Haller, H. Lu, W.J. Schaff, A. Barcz, R. Jakiela, Appl. Phys. Lett. 84, 2805 (2004)
  • 9. R. Ascazubi, I. Wilke, K. Denniston, H. Lu, W.J. Schaff, Appl. Phys. Lett. 84, 4810 (2004)
  • 10. Yu. Pozhela, A. Reklaitis, Fiz. Tekh. Poluprovodn. (S.-Petersburg) 13, 1127 (1979) [ Sov. Phys.-Semicond. 13, 660 (1979)]
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n237kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.