Efficient Terahertz Emission from InGaN/GaN Heterostructure

• Authors: A. Reklaitis
• Languages of publication: EN

Abstracts

EN

Terahertz emission from the freestanding InGaN/GaN heterostructure illuminated by femtosecond optical pulse is considered using Monte Carlo simulations. The results of Monte Carlo simulations show that the power of terahertz emission from InGaN/GaN heterostructure exceeds the power of the emission from InN surface by one order of magnitude.

Keywords

EN

42.72.Ai; 73.20.Mf; 75.70.-i; 78.20.Bh; 78.47.-p

Discipline

• 75.70.-i: Magnetic properties of thin films, surfaces, and interfaces(for magnetic properties of nanostructures, see 75.75.-c)
• 42.72.Ai: Infrared sources(see also 07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources)
• 73.20.Mf: Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)(for collective excitations in quantum Hall effects, see 73.43.Lp)
• 78.47.-p: Spectroscopy of solid state dynamics
• 78.20.Bh: Theory, models, and numerical simulation

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 212-214

Dates

published

2011-02

Contributors

author

A. Reklaitis

• Semiconductor Physics Institute, Centre for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

References

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Identifiers

DOI

10.12693/APhysPolA.119.212