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2011 | 119 | 2 | 196-198
Article title

Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to~15~K

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Languages of publication
EN
Abstracts
EN
We report measurements of the pulsed and dc current-voltage characteristics of AlGaN/GaN high-electron-mobility transistors as functions of geometry, temperature (from 300 down to 15 K), and operating conditions. An increase in the drain current with shortening of the pulse width from 1 μs to 400 ns is found to be significant at room temperature whilst this behavior is inverted or even removed at 77 and 15 K temperatures.
Keywords
EN
Year
Volume
119
Issue
2
Pages
196-198
Physical description
Dates
published
2011-02
References
  • 1. J. Kuzmik, Semicond. Sci. Technol. 17, 540 (2002)
  • 2. V. Kumar, A. Kuliev, R. Schwindt, M. Muir, G. Simin, J. Yang, M. Khan, I. Adesida, Solid-State Electron. 47, 1577 (2003)
  • 3. C. Lin, W. Wang, P. Lin, C. Lin, Y. Chang, Y. Chan, IEEE Electron Dev. Lett. 26, 710 (2005)
  • 4. A. Parker, J. Rathmell, IEEE Trans. Microwave Theory Techn. 49, 2105 (2001)
  • 5. J. Her, K. Lee, S. Lee, J. Lee, J. Oh, M. Han, K. Seo, Jpn. J. Appl. Phys. 44, 2726 (2005)
  • 6. K. Horio, A. Nakajima, K. Itagaki, Semicond. Sci. Technol. 24 (2009), doi: 10.1088/0268-1242/24/8/085022
  • 7. Y. Cordier, M. Azize, N. Baron, S. Chenot, O. Tottereau, J. Massies, J. Cryst. Growth 309, 1 (2007)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n232kz
Identifiers
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