Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to~15~K

• Authors: T. Laurent , R. Sharma , J. Torres , P. Nouvel , S. Blin , C. Palermo , L. Varani , Y. Cordier , M. Chmielowska , J. Faurie , B. Beaumont
• Languages of publication: EN

Abstracts

EN

We report measurements of the pulsed and dc current-voltage characteristics of AlGaN/GaN high-electron-mobility transistors as functions of geometry, temperature (from 300 down to 15 K), and operating conditions. An increase in the drain current with shortening of the pulse width from 1 μs to 400 ns is found to be significant at room temperature whilst this behavior is inverted or even removed at 77 and 15 K temperatures.

Keywords

EN

72.80.Ey   73.21.Fg   73.40.-c  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 196-198

Dates

published

2011-02

References

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Identifiers

DOI

10.12693/APhysPolA.119.196