Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to~15~K

• Authors: T. Laurent , R. Sharma , J. Torres , P. Nouvel , S. Blin , C. Palermo , L. Varani , Y. Cordier , M. Chmielowska , J. Faurie , B. Beaumont
• Languages of publication: EN

Abstracts

EN

We report measurements of the pulsed and dc current-voltage characteristics of AlGaN/GaN high-electron-mobility transistors as functions of geometry, temperature (from 300 down to 15 K), and operating conditions. An increase in the drain current with shortening of the pulse width from 1 μs to 400 ns is found to be significant at room temperature whilst this behavior is inverted or even removed at 77 and 15 K temperatures.

Keywords

EN

72.80.Ey; 73.21.Fg; 73.40.-c

Discipline

• 73.40.-c: Electronic transport in interface structures
• 72.80.Ey: III-V and II-VI semiconductors
• 73.21.Fg: Quantum wells

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 196-198

Dates

published

2011-02

Contributors

author

T. Laurent

• Institut d'Electronique du Sud, UMR 5214 - CNRS/Université Montepellier 2, Pl. E. Bataillon, 34095 Montpellier, France

author

R. Sharma

• Institut d'Electronique du Sud, UMR 5214 - CNRS/Université Montepellier 2, Pl. E. Bataillon, 34095 Montpellier, France

author

J. Torres

• Institut d'Electronique du Sud, UMR 5214 - CNRS/Université Montepellier 2, Pl. E. Bataillon, 34095 Montpellier, France

author

P. Nouvel

• Institut d'Electronique du Sud, UMR 5214 - CNRS/Université Montepellier 2, Pl. E. Bataillon, 34095 Montpellier, France

author

S. Blin

• Institut d'Electronique du Sud, UMR 5214 - CNRS/Université Montepellier 2, Pl. E. Bataillon, 34095 Montpellier, France

author

C. Palermo

• Institut d'Electronique du Sud, UMR 5214 - CNRS/Université Montepellier 2, Pl. E. Bataillon, 34095 Montpellier, France

author

L. Varani

• Institut d'Electronique du Sud, UMR 5214 - CNRS/Université Montepellier 2, Pl. E. Bataillon, 34095 Montpellier, France

author

Y. Cordier

• Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, UPR 10 - CNRS, R. Bernard Grégory, 06560 Valbonne, France

author

M. Chmielowska

• Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, UPR 10 - CNRS, R. Bernard Grégory, 06560 Valbonne, France

author

J. Faurie

• LUMILOG, 2720, Ch. Saint Bernard Les Moulins I, 06220 Vallauris, France

author

B. Beaumont

• LUMILOG, 2720, Ch. Saint Bernard Les Moulins I, 06220 Vallauris, France

References

• 1. J. Kuzmik, Semicond. Sci. Technol. 17, 540 (2002)
• 2. V. Kumar, A. Kuliev, R. Schwindt, M. Muir, G. Simin, J. Yang, M. Khan, I. Adesida, Solid-State Electron. 47, 1577 (2003)
• 3. C. Lin, W. Wang, P. Lin, C. Lin, Y. Chang, Y. Chan, IEEE Electron Dev. Lett. 26, 710 (2005)
• 4. A. Parker, J. Rathmell, IEEE Trans. Microwave Theory Techn. 49, 2105 (2001)
• 5. J. Her, K. Lee, S. Lee, J. Lee, J. Oh, M. Han, K. Seo, Jpn. J. Appl. Phys. 44, 2726 (2005)
• 6. K. Horio, A. Nakajima, K. Itagaki, Semicond. Sci. Technol. 24 (2009), doi: 10.1088/0268-1242/24/8/085022
• 7. Y. Cordier, M. Azize, N. Baron, S. Chenot, O. Tottereau, J. Massies, J. Cryst. Growth 309, 1 (2007)

Identifiers

DOI

10.12693/APhysPolA.119.196