Investigation of Magnetoresistance and Its Anisotropy of Thin Polycrystalline La_{0.83}Sr_{0.17}MnO_3 Films in High Pulsed Magnetic Fields

• Authors: N. Žurauskienė , S. Keršulis , L. Medišauskas , S. Tolvaišienė
• Languages of publication: EN

Abstracts

EN

The results on the study of grain boundary effects and influence of film deposition conditions on the magnetoresistance and its anisotropy in polycrystalline La_{0.83}Sr_{0.17}MnO_3 films are presented. The magnetoresistance was measured in high pulsed magnetic fields up to 25 T (pulse duration ≈ 0.6 ms) in the temperature range of 120-300 K. A modified Mott hopping model was applied to describe the main behavior of high-field magnetoresistance for both ferromagnetic and paramagnetic phases of the polycrystalline films by taking into account the demagnetization field of the films measured in low magnetic fields perpendicular to film plane. It was also found that to obtain the higher magnetoresistance saturation field at room temperature it is necessary to use the films with smaller crystallites (D ≈ 100 nm). Such films could be used for design of megagauss pulsed magnetic field sensors.

Keywords

EN

75.47.Gk; 75.47.Lx; 75.30.Gw; 85.70.Kh

Discipline

• 75.30.Gw: Magnetic anisotropy
• 75.47.Gk: Colossal magnetoresistance
• 75.47.Lx: Magnetic oxides
• 85.70.Kh: Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 186-188

Dates

published

2011-02

Contributors

author

N. Žurauskienė

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius, Lithuania
• Vilnius Gediminas Technical University, Sauletekio al. 11, Vilnius, Lithuania

author

S. Keršulis

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius, Lithuania

author

L. Medišauskas

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius, Lithuania

author

S. Tolvaišienė

• Vilnius Gediminas Technical University, Sauletekio al. 11, Vilnius, Lithuania

References

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Identifiers

DOI

10.12693/APhysPolA.119.186