Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures

• Authors: V. Nargelienė , S. Ašmontas , A. Čerškus , J. Gradauskas , J. Kundrotas , A. Sužiedėlis
• Languages of publication: EN

Abstracts

EN

We present investigation of photoluminescence properties of Si δ-doped GaAs structures at different temperatures and various laser excitation intensities. Strong excitonic emission was observed in the δ-doped structures. The photoluminescence in the infrared region, below excitonic emission, originates from a non-phonon free electron-acceptor e-A transitions and longitudinal optical phonon sidebands of e-A transitions. Possible mechanisms for recombination of photocarriers are discussed, with a particular focus on an enhanced excitonic photoluminescence emission in comparison with that from intrinsic GaAs layers of the same structures.

Keywords

EN

78.55.-m; 71.35.-y; 68.65.-k

Discipline

• 68.65.-k: Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties(for structure of nanoscale materials, see 61.46.-w; for magnetic properties of interfaces, see 75.70.Cn; for superconducting properties, see 74.78.-w; for optical properties, see 78.67.-n; for transport properties, see 73.63.-b; for thermal properties of nanocrystals and nanotubes, see 65.80.-g; for mechanical properties of nanoscale systems, see 62.25.-g)
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 71.35.-y: Excitons and related phenomena

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 177-179

Dates

published

2011-02

Contributors

author

V. Nargelienė

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

S. Ašmontas

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

A. Čerškus

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
• Department of General Physics, Vilnius Pedagogical University, Studentų 39, LT-08106 Vilnius, Lithuania

author

J. Gradauskas

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
• Vilnius Gediminas Technical University, Saulėtekio 11, LT-10223 Vilnius, Lithuania

author

J. Kundrotas

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
• Vilnius Gediminas Technical University, Saulėtekio 11, LT-10223 Vilnius, Lithuania

author

A. Sužiedėlis

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
• Vilnius Gediminas Technical University, Saulėtekio 11, LT-10223 Vilnius, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.119.177