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2011 | 119 | 2 | 170-172
Article title

Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields

Content
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EN
Abstracts
EN
The following peculiarities of electron transport in In_{0.53}Ga_{0.47}As/In_{0.52}Al_{0.48}As quantum wells with δ-Si-doped In_{0.52}Al_{0.48}As barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the In_{0.53}Ga_{0.47}As/In_{0.52}Al_{0.48}As quantum well, as well as increasing the InAs content in the modulation-doped In_{0.8}Ga_{0.2}As/In_{0.7}Al_{0.3}As heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1-4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; and (4) microwave current oscillations in high electric fields.
Keywords
Year
Volume
119
Issue
2
Pages
170-172
Physical description
Dates
published
2011-02
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n224kz
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