Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields

• Authors: K. Požela , J. Požela , V. Jucienė , I. Vasil'evskii , G. Galiev , E. Klimov , A. Sužiedėlis , N. Žurauskienė , V. Stankevič , S. Keršulis , Č. Paškevič
• Languages of publication: EN

Abstracts

EN

The following peculiarities of electron transport in In_{0.53}Ga_{0.47}As/In_{0.52}Al_{0.48}As quantum wells with δ-Si-doped In_{0.52}Al_{0.48}As barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the In_{0.53}Ga_{0.47}As/In_{0.52}Al_{0.48}As quantum well, as well as increasing the InAs content in the modulation-doped In_{0.8}Ga_{0.2}As/In_{0.7}Al_{0.3}As heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1-4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; and (4) microwave current oscillations in high electric fields.

Keywords

EN

72.20.Ht; 72.10.Di; 73.21.Fg; 73.63.Hs; 73.40.Kp

Discipline

• 73.21.Fg: Quantum wells
• 72.20.Ht: High-field and nonlinear effects
• 73.63.Hs: Quantum wells
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions
• 72.10.Di: Scattering by phonons, magnons, and other nonlocalized excitations(see also 71.45.-d Collective effects in electronic structure of bulk materials)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 170-172

Dates

published

2011-02

Contributors

author

K. Požela

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, Goštauto 11, Vilnius, Lithuania

author

J. Požela

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, Goštauto 11, Vilnius, Lithuania

author

V. Jucienė

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, Goštauto 11, Vilnius, Lithuania

author

I. Vasil'evskii

• National Research Nuclear University MEPhI, Moscow 115409, Russia

author

G. Galiev

• National Research Nuclear University MEPhI, Moscow 115409, Russia
• Institute of Microwave Semiconductor Electronics, Russian Academy of Sciences, Moscow 117105, Russia

author

E. Klimov

• National Research Nuclear University MEPhI, Moscow 115409, Russia
• Institute of Microwave Semiconductor Electronics, Russian Academy of Sciences, Moscow 117105, Russia

author

A. Sužiedėlis

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, Goštauto 11, Vilnius, Lithuania

author

N. Žurauskienė

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, Goštauto 11, Vilnius, Lithuania

author

V. Stankevič

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, Goštauto 11, Vilnius, Lithuania

author

S. Keršulis

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, Goštauto 11, Vilnius, Lithuania

author

Č. Paškevič

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, Goštauto 11, Vilnius, Lithuania

References

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Identifiers

DOI

10.12693/APhysPolA.119.170