Photoreflectance of Epitaxial InGaAs Quantum Rods

• Authors: R. Nedzinskas , V. Karpus , B. Čechavičius , J. Kavaliauskas , G. Valušis , L. Li , S. Khanna , E. Linfield
• Languages of publication: EN

Abstracts

EN

Photoreflectance spectroscopy and photoluminescence have been used to study the optical properties and electronic structure of InGaAs quantum rods grown by molecular beam epitaxy. Spectral features associated with interband optical transitions localized in the quantum rod and the surrounding quantum well regions are examined. Experimental results are compared with calculations performed within the envelope function approximation. A red shift of the quantum rod- and a blue shift of the quantum well-related optical transitions, along with a significant increase in PL intensity have been observed if an As_4 source is used instead of an As_2 source during the molecular beam epitaxial growth.

Keywords

EN

78.67.Hc; 78.55.Cr; 81.05.Ea

Discipline

• 78.55.Cr: III-V semiconductors
• 78.67.Hc: Quantum dots
• 81.05.Ea: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 164-166

Dates

published

2011-02

Contributors

author

R. Nedzinskas

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

V. Karpus

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

B. Čechavičius

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

J. Kavaliauskas

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

G. Valušis

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

L. Li

• School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

author

S. Khanna

• School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

author

E. Linfield

• School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

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Identifiers

DOI

10.12693/APhysPolA.119.164