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2011 | 119 | 2 | 164-166
Article title

Photoreflectance of Epitaxial InGaAs Quantum Rods

Content
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Languages of publication
EN
Abstracts
EN
Photoreflectance spectroscopy and photoluminescence have been used to study the optical properties and electronic structure of InGaAs quantum rods grown by molecular beam epitaxy. Spectral features associated with interband optical transitions localized in the quantum rod and the surrounding quantum well regions are examined. Experimental results are compared with calculations performed within the envelope function approximation. A red shift of the quantum rod- and a blue shift of the quantum well-related optical transitions, along with a significant increase in PL intensity have been observed if an As_4 source is used instead of an As_2 source during the molecular beam epitaxial growth.
Keywords
EN
Year
Volume
119
Issue
2
Pages
164-166
Physical description
Dates
published
2011-02
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n222kz
Identifiers
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