Enhancement of the Excitonic Photoluminescence in n^{+}/i-GaAs by Controlling the Thickness and Impurity Concentration of the n^{+} Layer

• Authors: A. Čerškus , V. Nargelienė , J. Kundrotas , A. Sužiedėlis , S. Ašmontas , J. Gradauskas , A. Johannessen , E. Johannessen
• Languages of publication: EN

Abstracts

EN

This communication presents the photoluminescence spectra of molecular beam epitaxially grown GaAs structures made from a 500 nm thick layer of intrinsic conductivity capped with a silicon doped layer with a film thickness ranging from 10 to 100 nm. Two different doping concentrations of the cap layer, N_{Si} = 10^{17} cm^{-3} and N_{Si} = 10^{18} cm^{-3}, was considered. The results showed the excitonic line of i-GaAs layer enhancement. The intensity of excitonic line was about 160 times higher for the homojunction compared to the intrinsic conductivity epitaxial layer at liquid helium temperature. Possible mechanisms of the observed intensity enhancement in the n^{+}/i-GaAs homojunction are discussed.

Keywords

EN

78.55.-m; 71.35.-y; 71.55.Eq

Discipline

• 71.55.Eq: III-V semiconductors
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 71.35.-y: Excitons and related phenomena

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 154-157

Dates

published

2011-02

Contributors

author

A. Čerškus

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
• Department of General Physics, Vilnius Pedagogical University, Studentų 39, LT-08106 Vilnius, Lithuania

author

V. Nargelienė

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

J. Kundrotas

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
• Vilnius Gediminas Technical University, Saulėtekio 11, LT-10223 Vilnius, Lithuania

author

A. Sužiedėlis

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
• Vilnius Gediminas Technical University, Saulėtekio 11, LT-10223 Vilnius, Lithuania

author

S. Ašmontas

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

J. Gradauskas

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
• Vilnius Gediminas Technical University, Saulėtekio 11, LT-10223 Vilnius, Lithuania

author

A. Johannessen

• Vestfold University College, Raveien 197, 3184 Borre, Norway

author

E. Johannessen

• Vestfold University College, Raveien 197, 3184 Borre, Norway

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Identifiers

DOI

10.12693/APhysPolA.119.154