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2011 | 119 | 2 | 154-157
Article title

Enhancement of the Excitonic Photoluminescence in n^{+}/i-GaAs by Controlling the Thickness and Impurity Concentration of the n^{+} Layer

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EN
Abstracts
EN
This communication presents the photoluminescence spectra of molecular beam epitaxially grown GaAs structures made from a 500 nm thick layer of intrinsic conductivity capped with a silicon doped layer with a film thickness ranging from 10 to 100 nm. Two different doping concentrations of the cap layer, N_{Si} = 10^{17} cm^{-3} and N_{Si} = 10^{18} cm^{-3}, was considered. The results showed the excitonic line of i-GaAs layer enhancement. The intensity of excitonic line was about 160 times higher for the homojunction compared to the intrinsic conductivity epitaxial layer at liquid helium temperature. Possible mechanisms of the observed intensity enhancement in the n^{+}/i-GaAs homojunction are discussed.
Keywords
EN
Contributors
author
  • Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
  • Department of General Physics, Vilnius Pedagogical University, Studentų 39, LT-08106 Vilnius, Lithuania
  • Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
  • Vilnius Gediminas Technical University, Saulėtekio 11, LT-10223 Vilnius, Lithuania
  • Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
  • Vilnius Gediminas Technical University, Saulėtekio 11, LT-10223 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
  • Vilnius Gediminas Technical University, Saulėtekio 11, LT-10223 Vilnius, Lithuania
  • Vestfold University College, Raveien 197, 3184 Borre, Norway
  • Vestfold University College, Raveien 197, 3184 Borre, Norway
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Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n219kz
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