Synthesis, Structure, Photoluminescence, and Raman Spectrum of Indium Oxide Nanowires

• Authors: H. Kim , H. Na , J. Yang , C. Lee , H. Kim
• Languages of publication: EN

Abstracts

EN

Production of indium oxide (In_2O_3) whiskers at a very low temperature of 650°C was reported. The synthetic route was comprised of a thermal heating process of a mixture of In and Mg powders. We have investigated the structural properties of the as-synthesized nanowires by using X-ray diffraction and scanning electron microscopy. The product consisted of one-dimensional nanowires, with a crystalline cubic structure of In_2O_3. The photoluminescence measurement with the Gaussian fitting exhibited visible light emission bands centered at 2.1 eV and 2.8 eV. The peaks of the Raman spectrum were indexed to the modes being associated with cubic In_2O_3.

Keywords

EN

81.07.-b; 78.55.-m

Discipline

• 81.07.-b: Nanoscale materials and structures: fabrication and characterization(for structure of nanoscale materials, see 61.46.-w; for nanostructured materials in electrochemistry, see 82.45.Yz; see also 62.23.-c Structural classes of nanoscale systems in mechanical properties of condensed matter)
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 143-145

Dates

published

2011-02

Contributors

author

H. Kim

• Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea

author

H. Na

• Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea

author

J. Yang

• Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea

author

C. Lee

• Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea

author

H. Kim

• Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea

References

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Identifiers

DOI

10.12693/APhysPolA.119.143