Sol-Gel Production and XPS Study of Sodium-Vanadium Oxide Bronze β-Phase

• Authors: V. Bondarenka , H. Tvardauskas , M. Senulis , A. Pašiškevičius , S. Grebinskij , S. Mickevičius , I. Vitkutė
• Languages of publication: EN

Abstracts

EN

A β-phase of sodium-vanadium oxide bronze thin film has been synthesized by using sol-gel technology from V_2O_5 and Na_2SO_4. The powders of these materials in suitable proportion were dissolved in hydrogen peroxide and heated up to 350 K for the dissociation of peroxide complexes. The obtained gel was deposited onto a metallic substrate and dried in air at room temperature. The produced xerogel was heated up to 580 K in air atmosphere for the removal of water from xerogel. Starting materials, xerogel, as well as a final product were investigated by means of X-ray photoelectron spectroscopy method. X-ray photoelectron spectra testify that the chemical bonds of vanadium, oxygen and sodium in the bronze differ from the similar bonds in the starting materials. The sulphur presence was detected in the xerogel but not in the final bronze composition.

Keywords

EN

68.47.Gh; 81.20.Fw; 82.80.Pv

Discipline

• 68.47.Gh: Oxide surfaces
• 81.20.Fw: Sol-gel processing, precipitation(for reactions in sol-gels, see 82.33.Ln; for sol-gels as disperse system, see 82.70.Gg)
• 82.80.Pv: Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 135-136

Dates

published

2011-02

Contributors

author

V. Bondarenka

• Semiconductor Physics Institute, Centre for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
• Vilnius Pedagogical University, Studentų 39, LT-08106 Vilnius, Lithuania

author

H. Tvardauskas

• Semiconductor Physics Institute, Centre for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

M. Senulis

• Semiconductor Physics Institute, Centre for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

A. Pašiškevičius

• Semiconductor Physics Institute, Centre for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

S. Grebinskij

• Semiconductor Physics Institute, Centre for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

S. Mickevičius

• Semiconductor Physics Institute, Centre for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

I. Vitkutė

• Vilnius Pedagogical University, Studentų 39, LT-08106 Vilnius, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.119.135