Photoluminescence Studies of Aluminum Nitride Nanowires

• Authors: J. Yang , H. Na , H. Kim , M. Kebede , R. Choi , J. Jeong , C. Lee , H. Kim
• Languages of publication: EN

Abstracts

EN

We report the production of AlN nanowires by the thermal heating method, for exploring their photoluminescence properties. The room-temperature photoluminescence properties were investigated with different annealing environment. While broad emissions with peaks at around 2.45 and 2.95 eV were obtained from both unannealed and annealed samples, the additional 2.1 eV peak was found from the annealed samples. We have suggested the possible emission mechanisms based on the assumption that both 2.45 eV peak and 2.1 eV peak are ascribed to the nitrogen vacancies. Annealing in N_2 environment exhibited lower intensities of 2.45 eV peak and 2.1 eV peak in comparison to those in Ar environment, presumably due to the suppression of nitrogen vacancies.

Keywords

EN

81.07.-b; 78.55.-m

Discipline

• 81.07.-b: Nanoscale materials and structures: fabrication and characterization(for structure of nanoscale materials, see 61.46.-w; for nanostructured materials in electrochemistry, see 82.45.Yz; see also 62.23.-c Structural classes of nanoscale systems in mechanical properties of condensed matter)
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 125-127

Dates

published

2011-02

Contributors

author

J. Yang

• Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea

author

H. Na

• Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea

author

H. Kim

• Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea

author

M. Kebede

• Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea

author

R. Choi

• Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea

author

J. Jeong

• Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea

author

C. Lee

• Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea

author

H. Kim

• Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea

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Identifiers

DOI

10.12693/APhysPolA.119.125