High-Frequency Noise in Modern FET/HEMT Channels Caused by the Excitation of 2D-Plasma Waves

• Authors: P. Shiktorov , E. Starikov , V. Gružinskis , L. Varani , L. Reggiani
• Languages of publication: EN

Abstracts

EN

The problems related with the intrinsic noise in FET/HEMT channels induced by continuous branching of the total current between channel and gate are considered in the framework of a simple analytical model and its predictions on the current-noise spectra. Main branching-induced effects such as the appearance of an additional noise related to the excitation of plasma waves, its dependence on FET/HEMT embedding circuits, interference properties, etc. are analysed.

Keywords

EN

72.20.Ht; 72.30.+q; 72.70.+m

Discipline

• 72.70.+m: Noise processes and phenomena
• 72.20.Ht: High-field and nonlinear effects
• 72.30.+q: High-frequency effects; plasma effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 117-120

Dates

published

2011-02

Contributors

author

P. Shiktorov

• Semiconductor Physics Institute, A. Goštauto 11, LT 01108 Vilnius, Lithuania

author

E. Starikov

• Semiconductor Physics Institute, A. Goštauto 11, LT 01108 Vilnius, Lithuania

author

V. Gružinskis

• Semiconductor Physics Institute, A. Goštauto 11, LT 01108 Vilnius, Lithuania

author

L. Varani

• Institut d'Électronique du Sud (CNRS UMR 5214), Université Montpellier II, 34 095 Montpellier Cedex 5, France

author

L. Reggiani

• Dipartimento di Ingegneria dell'Innovazione and CNISM, Università del Salento, Via Arnesano s/n, 73100 Lecce, Italy

References

• 1. P. Shiktorov, L. Varani, G. Sabatini, H. Marinchio, L. Reggiani, J. Stat. Mech. 01, 01047 (2009)
• 2. P. Shiktorov, E. Starikov, V. Gružinskis, L. Varani, L. Reggiani, AIP Conf. Proc. 1129, 179 (2009)
• 3. P. Shiktorov, E. Starikov, V. Gružinskis, S. Pérez, T.González, L. Reggiani, L. Varani, J.C. Vaissière, Phys. Rev. B 67, 165201 (2003)
• 4. M. Dyakonov, M. Shur, IEEE Trans. Electron Dev. 43, 1640 (1996)
• 5. J.-F. Millithaler, L. Reggiani, J. Pousset, L. Varani, C. Palermo, W. Knap, J. Mateos, T. Gonzalez, S. Perez, D. Pardo, Appl. Phys. Lett. 92, 042113 (2008)

Identifiers

DOI

10.12693/APhysPolA.119.117