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2011 | 119 | 2 | 117-120
Article title

High-Frequency Noise in Modern FET/HEMT Channels Caused by the Excitation of 2D-Plasma Waves

Content
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Languages of publication
EN
Abstracts
EN
The problems related with the intrinsic noise in FET/HEMT channels induced by continuous branching of the total current between channel and gate are considered in the framework of a simple analytical model and its predictions on the current-noise spectra. Main branching-induced effects such as the appearance of an additional noise related to the excitation of plasma waves, its dependence on FET/HEMT embedding circuits, interference properties, etc. are analysed.
Keywords
EN
Publisher

Year
Volume
119
Issue
2
Pages
117-120
Physical description
Dates
published
2011-02
Contributors
author
  • Semiconductor Physics Institute, A. Goštauto 11, LT 01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, LT 01108 Vilnius, Lithuania
  • Semiconductor Physics Institute, A. Goštauto 11, LT 01108 Vilnius, Lithuania
author
  • Institut d'Électronique du Sud (CNRS UMR 5214), Université Montpellier II, 34 095 Montpellier Cedex 5, France
author
  • Dipartimento di Ingegneria dell'Innovazione and CNISM, Università del Salento, Via Arnesano s/n, 73100 Lecce, Italy
References
  • 1. P. Shiktorov, L. Varani, G. Sabatini, H. Marinchio, L. Reggiani, J. Stat. Mech. 01, 01047 (2009)
  • 2. P. Shiktorov, E. Starikov, V. Gružinskis, L. Varani, L. Reggiani, AIP Conf. Proc. 1129, 179 (2009)
  • 3. P. Shiktorov, E. Starikov, V. Gružinskis, S. Pérez, T.González, L. Reggiani, L. Varani, J.C. Vaissière, Phys. Rev. B 67, 165201 (2003)
  • 4. M. Dyakonov, M. Shur, IEEE Trans. Electron Dev. 43, 1640 (1996)
  • 5. J.-F. Millithaler, L. Reggiani, J. Pousset, L. Varani, C. Palermo, W. Knap, J. Mateos, T. Gonzalez, S. Perez, D. Pardo, Appl. Phys. Lett. 92, 042113 (2008)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n207kz
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