Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells

• Authors: T. Laurent , R. Sharma , J. Torres , P. Nouvel , S. Blin , L. Chusseau , C. Palermo , L. Varani , Y. Cordier , M. Chmielowska , J. Faurie , B. Beaumont , P. Shiktorov , E. Starikov , V. Gruzinskis
• Languages of publication: EN

Abstracts

EN

We report transmission measurements of GaN quantum well grown on sapphire substrate in the 220-325 GHz frequency band at low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found.

Keywords

EN

78.20.-e; 78.67.De; 73.21.Fg

Discipline

• 78.67.De: Quantum wells
• 73.21.Fg: Quantum wells
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 107-110

Dates

published

2011-02

Contributors

author

T. Laurent

• Institut d'Electronique du Sud, UMR 5214 - CNRS/Université Montpellier 2, Pl. E. Bataillon, 34095 Montpellier, France

author

R. Sharma

• Institut d'Electronique du Sud, UMR 5214 - CNRS/Université Montpellier 2, Pl. E. Bataillon, 34095 Montpellier, France

author

J. Torres

• Institut d'Electronique du Sud, UMR 5214 - CNRS/Université Montpellier 2, Pl. E. Bataillon, 34095 Montpellier, France

author

P. Nouvel

• Institut d'Electronique du Sud, UMR 5214 - CNRS/Université Montpellier 2, Pl. E. Bataillon, 34095 Montpellier, France

author

S. Blin

• Institut d'Electronique du Sud, UMR 5214 - CNRS/Université Montpellier 2, Pl. E. Bataillon, 34095 Montpellier, France

author

L. Chusseau

• Institut d'Electronique du Sud, UMR 5214 - CNRS/Université Montpellier 2, Pl. E. Bataillon, 34095 Montpellier, France

author

C. Palermo

• Institut d'Electronique du Sud, UMR 5214 - CNRS/Université Montpellier 2, Pl. E. Bataillon, 34095 Montpellier, France

author

L. Varani

• Institut d'Electronique du Sud, UMR 5214 - CNRS/Université Montpellier 2, Pl. E. Bataillon, 34095 Montpellier, France

author

Y. Cordier

• Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, UPR 10 - CNRS, R. Bernard Grégory, 06560 Valbonne, France

author

M. Chmielowska

• Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, UPR 10 - CNRS, R. Bernard Grégory, 06560 Valbonne, France

author

J. Faurie

• LUMILOG, 2720, Ch. Saint Bernard Les Moulins I, 06220 Vallauris, France

author

B. Beaumont

• LUMILOG, 2720, Ch. Saint Bernard Les Moulins I, 06220 Vallauris, France

author

P. Shiktorov

• Semiconductor Physics Institute, A. Gostauto 11, 2600 Vilnius, Lithuania

author

E. Starikov

• Semiconductor Physics Institute, A. Gostauto 11, 2600 Vilnius, Lithuania

author

V. Gruzinskis

• Semiconductor Physics Institute, A. Gostauto 11, 2600 Vilnius, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.119.107