Plasma Oscillations in Nanotransistors: Application to THz Radiations Detection and Generation

• Authors: H. Marinchio , G. Sabatini , C. Palermo , P. Nouvel , J. Torres , L. Varani , P. Shiktorov , E. Starikov , V. Gružinskis
• Languages of publication: EN

Abstracts

EN

By means of a numerical hydrodynamic model, we consider the mechanism of collective plasma oscillations in a field-effect transistor channel under different excitations and biasing conditions. First, we consider the case of a device externally-excited by a harmonic optical beating or an electronic excitation under constant current condition at the drain. Both situations exhibit sharp resonances related to the first odd plasma modes illustrating the possibility of using the HEMT as a terahertz photomixer or detector. Then, we demonstrate that the frequencies, amplitudes and quality factors of the resonances can be strongly modified by varying the drain biasing condition from current- to voltage-driven operation.

Keywords

EN

72.15.Nj; 72.20.Ht; 72.30.+q

Discipline

• 72.20.Ht: High-field and nonlinear effects
• 72.30.+q: High-frequency effects; plasma effects
• 72.15.Nj: Collective modes (e.g., in one-dimensional conductors)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 103-106

Dates

published

2011-02

Contributors

author

H. Marinchio

• Institut d'Electronique du Sud, UMR 5214 CNRS, Université Montpellier 2, 34095 Montpellier, France

author

G. Sabatini

• Institut d'Electronique du Sud, UMR 5214 CNRS, Université Montpellier 2, 34095 Montpellier, France

author

C. Palermo

• Institut d'Electronique du Sud, UMR 5214 CNRS, Université Montpellier 2, 34095 Montpellier, France

author

P. Nouvel

• Institut d'Electronique du Sud, UMR 5214 CNRS, Université Montpellier 2, 34095 Montpellier, France

author

J. Torres

• Institut d'Electronique du Sud, UMR 5214 CNRS, Université Montpellier 2, 34095 Montpellier, France

author

L. Varani

• Institut d'Electronique du Sud, UMR 5214 CNRS, Université Montpellier 2, 34095 Montpellier, France

author

P. Shiktorov

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania

author

E. Starikov

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania

author

V. Gružinskis

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.119.103