PL EN


Preferences help
enabled [disable] Abstract
Number of results
2010 | 118 | 6 | 1199-1204
Article title

Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

Content
Title variants
Languages of publication
EN
Abstracts
EN
One of the key factor which determine HgCdTe photodiode quality is acceptor doping efficiency. This paper presents significant progress made over the past three years in development of acceptor doping technology in metalorganic chemical vapour deposition HgCdTe photovoltaic detectors. High acceptor doping is required for P^{+}-contact layers, whereas low doping is necessary for p-type absorbing base layer. Previously, AsH_3 precursor was used as an acceptor dopant. This precursor is partially incorporated as electrically neutral As-H pairs, which are likely to be recombination centres in HgCdTe and in consequence influence on the carriers lifetime lowering. Substituting of AsH_3 by TDMAAs resulted in higher carrier lifetimes and thereby about one order of magnitude higher R_0A product of HgCdTe photodiodes in temperatures close to 230 K.
Keywords
Contributors
author
  • Institute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland
author
  • Institute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland
author
  • Vigo System S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland
author
  • Vigo System S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland
author
  • Institute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland
author
  • Institute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland
References
  • 1. A. Rogalski, Rep. Prog. Phys. 68, 2267 (2005)
  • 2. P. Mitra, F.C. Case, M.B. Reine, J. Electron. Mater. 27, 510 (1998)
  • 3. P. Madejczyk, A. Piotrowski, K. Kłos, W. Gawron, A. Rogalski, J. Rutkowski, W. Mróz, Bull. Pol. Acad. Sci.: Tech. Sci. 57, 173 (2009)
  • 4. P. Madejczyk, A. Piotrowski, W. Gawron, K. Kłos, J. Pawluczyk, J. Rutkowski, J. Piotrowski, A. Rogalski, Opto-Electron. Rev. 13, 239 (2005)
  • 5. C.D. Maxey, I.G. Gale, J.B. Clegg, P.A.C. Whiffin, Semicond. Sci. Technol. 8, S183 (1993)
  • 6. M.A. Kinch, Fundamentals of Infrared Detector Materials, SPIE Press, Bellingham 2007
  • 7. G.K.O. Tsen, C.A. Musca, J.M. Dell, J. Antoszewski, L. Faraone, J. Electron. Mater. 36, 826 (2007)
  • 8. T. Wong, M.Sc. Thesis, Massachusetts Institute of Technology, 1974
  • 9. E.C. Piquette, DD. Edwall, D.L. Lee, J.M. Arias, J. Electron. Mater. 35, 1346 (2006)
  • 10. C.H. Swartz, R.P. Tompkins, N.C. Giles, T.H. Myers, D.D. Edwall, J. Ellsworth, E. Piquette, J. Arias, M. Berding, S. Krishnamurthy, I. Vurgaftman, J.R. Meyer, J. Electron. Mater. 33, 728 (2004)
  • 11. L. Svob, I. Cheye, A. Lusson, D. Ballutaud, J.F. Rommeluere, Y. Marfaing, J. Cryst. Growth 184/185, 459 (1998)
  • 12. S. Krishnamurthy, T.N. Casselman, J. Electron. Mater. 29, 828 (2000)
  • 13. M.A. Kinch, F. Aqariden, D. Chandra, P-K Liao, H.F. Schaake, H.D. Shih, J. Electron. Mater. 34, 880 (2005)
  • 14. V.C. Lopes, A.J. Syllaios, M.C. Chen, Semicond. Sci. Technol. 8, 824 (1993)
  • 15. S. Krishnamurthy, M.A. Berding, Z.G. Yu, C.H. Swartz, T.H. Myers, D.D. Edwall, R. DeWames, J. Electron. Mater. 34, 873 (2005)
  • 16. A. Rogalski, Acta Phys. Pol. A 116, 389 (2009)
  • 17. A. Rogalski, K. Adamiec, J. Rutkowski, Narrow-Gap Semiconductor Photodiodes, SPIE Press, Bellingham 2000
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv118n628kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.