Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

• Authors: P. Madejczyk , W. Gawron , A. Piotrowski , K. Kłos , J. Rutkowski , A. Rogalski
• Languages of publication: EN

Abstracts

EN

One of the key factor which determine HgCdTe photodiode quality is acceptor doping efficiency. This paper presents significant progress made over the past three years in development of acceptor doping technology in metalorganic chemical vapour deposition HgCdTe photovoltaic detectors. High acceptor doping is required for P^{+}-contact layers, whereas low doping is necessary for p-type absorbing base layer. Previously, AsH_3 precursor was used as an acceptor dopant. This precursor is partially incorporated as electrically neutral As-H pairs, which are likely to be recombination centres in HgCdTe and in consequence influence on the carriers lifetime lowering. Substituting of AsH_3 by TDMAAs resulted in higher carrier lifetimes and thereby about one order of magnitude higher R_0A product of HgCdTe photodiodes in temperatures close to 230 K.

Keywords

EN

42.79.Pw   07.57.Kp   73.21.Cd   78.67.Pt   79.60.Jv  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 118
• Issue: 6
• Pages: 1199-1204

Dates

published

2010-12

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Identifiers

DOI

10.12693/APhysPolA.118.1199