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2010 | 118 | 5 | 1026-1027
Article title

The Superconducting Transition in Boron Doped Silicon Films

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EN
Abstracts
EN
We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by gas immersion laser doping. This technique is proved to be a powerful technique to dope silicon in the alloying range 2-10 at.% where superconductivity occurs. The superconducting transitions are sharp and well defined both in resistivity and magnetic susceptibility. The variation of T_{c} on the boron concentration is in contradiction with a classical exponential dependence on superconducting parameters. Electrical measurements were performed in magnetic field on the sample with c_{B} = 8 at.% (400 laser shots) which has the highest T_{c} (0.6 K). No hysteresis was found for the transitions in magnetic field, which is characteristic of a type-II superconductor. The corresponding upper critical field was on the order of 1000 G at low temperatures, much smaller than the value previously reported. The temperature dependence of H_{c2} is very well reproduced by the linearized Gorkov equations neglecting spin effects in the very dirty limit. These measurements in magnetic field allow an estimation of the electronic mean-free path, the coherence length, and the London penetration depth within a simple two-band free electron model.
Keywords
EN
Contributors
  • Université Paris-Sud, Institut d'Electronique Fondamentale, UMR8622, 91405 Orsay, France
  • CNRS, 91405 Orsay, France
author
  • Université Paris-Sud, Institut d'Electronique Fondamentale, UMR8622, 91405 Orsay, France
  • CNRS, 91405 Orsay, France
author
  • CEA-INAC/UJF-Grenoble 1, SPSMS, UMR-E 9001, 17 Rue des Martyrs, 38054 Grenoble, France
  • CNRS, Institut Néel, B.P. 166, 38042 Grenoble, France
  • CEA-INAC/UJF-Grenoble 1, SPSMS, UMR-E 9001, 17 Rue des Martyrs, 38054 Grenoble, France
  • Centre of Very Low Temperature Physics, IEP SAS and FS UPJŠ, 040 01 Košice, Slovakia
author
  • CEA-INAC/UJF-Grenoble 1, SPSMS, UMR-E 9001, 17 Rue des Martyrs, 38054 Grenoble, France
author
  • CNRS, Institut Néel, B.P. 166, 38042 Grenoble, France
author
  • CNRS, Institut Néel, B.P. 166, 38042 Grenoble, France
author
  • CNRS, Institut Néel, B.P. 166, 38042 Grenoble, France
  • Institut Universitaire de France and Université Joseph Fourier, B.P. 53, 38041 Grenoble, France
author
  • CNRS and INSA, Institut des Nanotechnologies de Lyon, 7 av. J. Capelle, 69621 Villeurbanne, France
author
  • CNRS and INSA, Institut des Nanotechnologies de Lyon, 7 av. J. Capelle, 69621 Villeurbanne, France
author
  • CNRS and INSA, Institut des Nanotechnologies de Lyon, 7 av. J. Capelle, 69621 Villeurbanne, France
author
  • CNRS and INSA, Institut des Nanotechnologies de Lyon, 7 av. J. Capelle, 69621 Villeurbanne, France
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv118n5128kz
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