The Superconducting Transition in Boron Doped Silicon Films

• Authors: T. Kociniewski , D. Débarre , A. Grockowiak , J. Kačmarčík , C. Marcenat , E. Bustarret , L. Ortega , T. Klein , G. Prudon , C. Dubois , B. Gautier , J. Dupuy
• Languages of publication: EN

Abstracts

EN

We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by gas immersion laser doping. This technique is proved to be a powerful technique to dope silicon in the alloying range 2-10 at.% where superconductivity occurs. The superconducting transitions are sharp and well defined both in resistivity and magnetic susceptibility. The variation of T_{c} on the boron concentration is in contradiction with a classical exponential dependence on superconducting parameters. Electrical measurements were performed in magnetic field on the sample with c_{B} = 8 at.% (400 laser shots) which has the highest T_{c} (0.6 K). No hysteresis was found for the transitions in magnetic field, which is characteristic of a type-II superconductor. The corresponding upper critical field was on the order of 1000 G at low temperatures, much smaller than the value previously reported. The temperature dependence of H_{c2} is very well reproduced by the linearized Gorkov equations neglecting spin effects in the very dirty limit. These measurements in magnetic field allow an estimation of the electronic mean-free path, the coherence length, and the London penetration depth within a simple two-band free electron model.

Keywords

EN

74.62.Dh; 73.61.Cw; 74.70.Ad

Discipline

• 73.61.Cw: Elemental semiconductors
• 74.62.Dh: Effects of crystal defects, doping and substitution(for specific crystal defects, see 61.72.-y)
• 74.70.Ad: Metals; alloys and binary compounds (including A15, MgB2, etc.)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 118
• Issue: 5
• Pages: 1026-1027

Dates

published

2010-11

Contributors

author

T. Kociniewski

• Université Paris-Sud, Institut d'Electronique Fondamentale, UMR8622, 91405 Orsay, France
• CNRS, 91405 Orsay, France

author

D. Débarre

• Université Paris-Sud, Institut d'Electronique Fondamentale, UMR8622, 91405 Orsay, France
• CNRS, 91405 Orsay, France

author

A. Grockowiak

• CEA-INAC/UJF-Grenoble 1, SPSMS, UMR-E 9001, 17 Rue des Martyrs, 38054 Grenoble, France
• CNRS, Institut Néel, B.P. 166, 38042 Grenoble, France

author

J. Kačmarčík

• CEA-INAC/UJF-Grenoble 1, SPSMS, UMR-E 9001, 17 Rue des Martyrs, 38054 Grenoble, France
• Centre of Very Low Temperature Physics, IEP SAS and FS UPJŠ, 040 01 Košice, Slovakia

author

C. Marcenat

• CEA-INAC/UJF-Grenoble 1, SPSMS, UMR-E 9001, 17 Rue des Martyrs, 38054 Grenoble, France

author

E. Bustarret

• CNRS, Institut Néel, B.P. 166, 38042 Grenoble, France

author

L. Ortega

• CNRS, Institut Néel, B.P. 166, 38042 Grenoble, France

author

T. Klein

• CNRS, Institut Néel, B.P. 166, 38042 Grenoble, France
• Institut Universitaire de France and Université Joseph Fourier, B.P. 53, 38041 Grenoble, France

author

G. Prudon

• CNRS and INSA, Institut des Nanotechnologies de Lyon, 7 av. J. Capelle, 69621 Villeurbanne, France

author

C. Dubois

• CNRS and INSA, Institut des Nanotechnologies de Lyon, 7 av. J. Capelle, 69621 Villeurbanne, France

author

B. Gautier

• CNRS and INSA, Institut des Nanotechnologies de Lyon, 7 av. J. Capelle, 69621 Villeurbanne, France

author

J. Dupuy

• CNRS and INSA, Institut des Nanotechnologies de Lyon, 7 av. J. Capelle, 69621 Villeurbanne, France

References

• 1. X. Blase, E. Bustarret, C. Chapelier, T. Klein, C. Marcenat, Nature Mater. 8, 375 (2009)
• 2. E. Bustarret, C. Marcenat, P. Achatz, J. Kačmarčík, F. Lévy, A. Huxley, L. Ortéga, E. Bourgeois, X. Blase, D. Débarre, J. Boulmer, Nature 444, 542 (2004)
• 3. G. Kerrien, M. Hernandez, C. Laviron, T. Sarnet, D. Débarre, T. Noguchi, D. Zahorski, J. Venturini, M.N. Semeria, J. Boulmer, Appl. Surf. Sci. 208-209, 277 (2003)
• 4. D. Cammilleri, F. Fossard, D. Débarre, C.T. Manh, C. Dubois, E. Bustarret, C. Marcenat, P. Achatz, D. Bouchier, J. Boulmer, Thin Solid Films 517, 75 (2008)
• 5. C. Marcenat, J. Kačmarčík, R. Piquerel, P. Achatz, G. Prudon, C. Dubois, B. Gautier, J.C. Dupuy, E. Bustarret, L. Ortega, T. Klein, J. Boulmer, T. Kociniewski, D. Débarre, Phys. Rev. B 81, 020501 (2010)
• 6. C. Dubois, G. Prudon, B. Gautier, J.C. Dupuy, Appl. Surf. Sci. 255, 1377 (2008)
• 7. T. Klein, P. Achatz, J. Kačmarčík, C. Marcenat, F. Gustafsson, J. Marcus, E. Bustarret, J. Pernot, F. Omnes, E. Bo, C. Sernelius, A. Persson, Ferreira da Silva, C. Cytermann, Phys. Rev. B 75, 165313 (2007)
• 8. L. Boeri, J. Kortus, O.K. Andersen, Phys. Rev. Lett. 93, 237002 (2007)
• 9. A.L. Fetter, P.C. Hohenberg, in: Superconductivity Vol. 2, Ed. R.D. Parks, M. Dekker, New-York 1969, p. 187

Identifiers

DOI

10.12693/APhysPolA.118.1026