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2010 | 118 | 5 | 843-845
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Electrical Resistance Anomalies in Holmium Thin Films below 20 K in Magnetic Field

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Electrical resistance (R) of Ho thin films evaporated in vacuum ≈ 10^{-7} Pa was studied in a temperature range from 2 K up to 300 K and in magnetic field up to 9 T. Measurements showed resistance anomalies below 20 K - minima of R value in 36 nm and 215 nm thin films and resistivity maximum at 3.58 K in 215 nm Ho film. Increasing value of the magnetic field, applied perpendicular to film surface up to 5 T, caused increasing suppression of the R minima in these films with subsequent disappearance of them in fields above 5 T. Maximum of R value in 215 nm thin film at 3.58 K decreased with increasing flux density up to 5 T and it was suppressed at fields above 5 T. X-ray diffraction of these films revealed two phases composition consisting of the hexagonal Ho and of cubic HoH_2. The preferential crystal orientation of both phases was detected.
  • Dep. of Theoretical Electrotechnics and Electrical Measurement, TU, Park Komenského 3, SK-043 89 Košice, Slovakia
  • Institute of Experimental Physics, SAS, SK-043 53 Košice, Slovakia
  • Institute of Experimental Physics, SAS, SK-043 53 Košice, Slovakia
  • Institute of Physics, A. Mickiewicz University, PL-61-614 Poznań, Poland
  • Húskova 61, 041 11 Košice, Slovakia
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