PL EN


Preferences help
enabled [disable] Abstract
Number of results
2010 | 118 | 4 | 673-676
Article title

Influence of InAs Coverage on Transition of Size Distribution and Optical Properties of InAs Quantum Dots

Content
Title variants
Languages of publication
EN
Abstracts
EN
The influence of InAs coverage on the formation of self-assembled quantum dots grown by molecular-beam epitaxy was investigated by atomic force microscopy and photoluminescence measurements. As the InAs coverage increased from 2.0 to 3.0 monolayers, the quantum dot density decreased from 1.1 × 10^{11} to 1.36 × 10^{10} cm^{-2}. This result could be attributed to the coalescence of neighboring small InAs quantum dots resulting in the formation of much larger InAs quantum dots with lower quantum dot density. Atomic force microscopy results revealed that as the InAs quantum dot coverage increased, the transition of size distribution of InAs quantum dots from single-modal to multimodal occurred. The temperature-dependent photoluminescence spectra showed that the photoluminescence spectra red shifted and the photoluminescence peak intensity decreased as the InAs coverage increased. The thermal activation energy was strongly dependent on the InAs coverage, and for InAs quantum dots with 3.0 ML thick InAs coverage, this energy was estimated to be 147 meV.
Keywords
Publisher

Year
Volume
118
Issue
4
Pages
673-676
Physical description
Dates
published
2010-10
received
2009-05-25
(unknown)
2010-04-27
(unknown)
2010-06-08
Contributors
author
  • Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea
author
  • Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea
author
  • Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea
author
  • Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea
author
  • Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea
author
  • Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea
author
  • ATTO Co., Ltd., Shiheung 429-849, Korea
author
  • Department of Physics, Kyung Hee University, Seoul 130-701, Korea
author
  • Department of Information Materials Science and Engineering, Chonbuk University, Jeonju 664-14, Korea
author
  • Department of Physics, Yeungnam University, Gyeongsan 712-749, Korea
author
  • Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea
References
  • 1. D. Reuter, V. Stavarache, A.D. Wieck, M. Schwab, R. Oulton, M. Bayer, Physica E 32, 73 (2006)
  • 2. J.S. Kim, C.-R. Lee, I.H. Lee, J.-Y. Leem, J.S. Kim, M.-Y. Ryu, J. Appl. Phys. 102, 073501 (2007)
  • 3. T. Okawa, Y. Yamauchi, J. Yamamoto, J. Yoshida, K. Shimomura, J. Cryst. Growth 298, 562 (2007)
  • 4. J.S. Kim, J.H. Lee, S.U. Hong, W.S. Han, H.-S. Kwack, C.W. Lee, D.K. Oh, J. Appl. Phys. 94, 6603 (2003)
  • 5. T. Yang, M. Nishioka, Y. Arakawa, J. Cryst. Growth 310, 5469 (2008)
  • 6. Y. Yang, B. Jo, J. Kim, K.J. Lee, M. Ko, C.-R. Lee, J.S. Kim, D.K. Oh, J.S. Kim, J.-Y. Leem, Thin Solid Films 517, 3979 (2009)
  • 7. J.S. Kim, P.W. Yu, J.-Y. Leem, J.I. Lee, S.K. Noh, J.S. Kim, G.H. Kim, S.-K. Kang, S.I. Ban, S.G. Kim, Y.D. Jang, U.H. Lee, J.S. Yim, D. Lee, J. Cryst. Growth 234, 105 (2002)
  • 8. Y. Nakata, Y. Sugiyama, in: Self-Assembled InGaAs/GaAs Quantum Dots Semiconductor and Semimetals, Vol. 60, Ed. M. Sugawara, Academic Press, New York 1999, p. 121
  • 9. S.J. Lee, S.K. Noh, J.W. Choe, E.K. Kim, J. Cryst. Growth 267, 405 (2004)
  • 10. S.I. Jung, H.Y. Yeo, I. Yun, J.Y. Leem, I.K. Han, J.S. Kim, J.I. Lee, Physica E 33, 280 (2006)
  • 11. A. Tackeuchi, Y. Nakata, S. Muto, Y. Sugiyama, T. Inata, N. Yokoyama, Jpn. J. Appl. Phys. 34, L405 (1995)
  • 12. L. Brusaferri, S. Sanguinetti, E. Grilli, M. Guzzi, A. Bignazzi, F. Bogani, L. Carraresi, M. Colocci, A. Bosacchi, P. Frigeri, S. Franchi, Appl. Phys. Lett. 69, 3354 (1996)
  • 13. H. Lee, R. Lowe-Web, T.J. Johnson, W. Yang, P.C. Sercel, Appl. Phys. Lett. 73, 3556 (1998)
  • 14. B. Ilahi, L. Sfaxi, H. Maaref, G. Bremond, G. Guillot, Superlattice Microstruct. 36, 55 (2004)
  • 15. W. Zhou, B. Xu, H.Z. Xu, F.Q. Liu, J.B. Liang, Z.G. Wang, Z.Z. Zhu, G.H. Li, J. Electron. Mater. 28, 525 (1999)
  • 16. L. Kong, Z.C. Feng, Z. Wu, W. Lu, J. Appl. Phys. 106, 013512 (2009)
  • 17. C.Y. Lee, J.D. Song, J.M. Kim, K.S. Chang, Y.T. Lee, T.W. Kim, Mater. Res. Bull. 39, 135 (2004)
  • 18. H. Kissel, U. Mueller, C. Walther, W.T. Masselink, Yu.I. Mazur, G.G. Tarasov, M.P. Lisitsa, Phys. Rev. B 62, 7213 (2000)
  • 19. W.H. Jiang, X.L. Ye, B. Xu, H.Z. Xu, D. Ding, J.B. Liang, Z.G. Wang, J. Appl. Phys. 88, 2529 (2000)
  • 20. Y.C. Zhang, C.J. Huang, F.Q. Liu, B. Xu, Y.H. Chen, D. Ding, W.H. Jiang, X.L. Ye, Z.G. Wang, J. Appl. Phys. 90, 1973 (2001)
  • 21. S. Sanguinetti, M. Henini, M.G. Alessi, M. Capizzi, P. Frigeri, S. Franchi, Phys. Rev. B 60, 8276 (1999)
  • 22. H.L. Wang, D. Ning, S.L. Feng, J. Cryst. Growth 209, 630 (2000)
  • 23. T.-W. Kang, J.-E. Oh, J. Cryst. Growth 227-228, 1039 (2001)
  • 24. Z.Y. Zhang, C.L. Yang, Y.Q. Wei, X.L. Ye, P. Jin, Ch.M. Li, X.Q. Meng, B. Xu, Z.G. Wang, Solid State Commun. 126, 391 (2003)
  • 25. H.C. Im, J.H. Kim, D.H. Oh, T.W. Kim, K.H. Yoo, M.D. Kim, Appl. Surf. Sci. 252, 4146 (2006)
  • 26. K. Pterz, A. Miglo, P. Himze, F.J. Ahlers, G. Ade, I. Hapke-Wurst, U. Zeitler, R.J. Haug, Phys. Status Solidi B 224, 119 (2001)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv118n427kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.