Comparative Study of ZnO Thin Films Prepared by Different Sol-Gel Route

• Authors: F. Ghodsi , H. Absalan
• Languages of publication: EN

Abstracts

EN

The ZnO thin films were prepared from zinc acetate dihydrate as main precursor by using sol-gel method and deposited by drainage and dip coating technique. Four different routes and coating techniques were used for the preparation of samples. The morphology, optical, and structural properties of the sol-gel made ZnO thin films were studied with respect to the preparation of sol-gel route, drainage and dip coating technique. The microstructure of the ZnO thin films and the powders were analyzed by X-ray diffraction. The ZnO thin films prepared in this study were amorphous while its powders were polycrystalline with various diffraction peaks in the X-ray diffraction patterns. The morphology of the film was examined by using scanning electron microscopy. The surface morphology of the ZnO thin films strongly depends on preparation route and deposition technique. The optical characteristics of the samples were obtained by using UV-Visible spectrophotometer at 200-900 nm wavelength. The optical constants (refractive index, extinction coefficient etc.) of the ZnO thin films depend on preparation conditions. The photoluminescence spectra of the ZnO films show the band-edge and sub-band transitions.

Keywords

EN

78.20.Ci; 78.55.Hx; 78.66.Bz; 81.20.Fw

Discipline

• 78.66.Bz: Metals and metallic alloys
• 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
• 81.20.Fw: Sol-gel processing, precipitation(for reactions in sol-gels, see 82.33.Ln; for sol-gels as disperse system, see 82.70.Gg)
• 78.55.Hx: Other solid inorganic materials

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 118
• Issue: 4
• Pages: 659-664

Dates

published

2010-10

received

2010-04-17

(unknown)

2010-06-14

Contributors

author

F. Ghodsi

• Department of Physics, Faculty of Science, University of Guilan, Namjoo Ave., P.O. Box: 41335-1914, Rasht, Iran

author

H. Absalan

• Department of Physics, Faculty of Science, University of Guilan, Namjoo Ave., P.O. Box: 41335-1914, Rasht, Iran

References

• 1. W. Water, S. Yuan Chu, Mater. Lett. 55, 67 (2002)
• 2. Y. Huang, M. Liu, S. Jiang, Y. Zeng, C. Li, S. Liu, D. Zhou, Microelectron. Eng. 66, 760 (2003)
• 3. H. Sato, T. Mianini, Y. Tamura, S. Takata, T. Mouri, N. Ogawa, Thin Solid Films 246, 86 (1994)
• 4. T.L. Chu, S.S. Chu, J. Electron. Mater. 19, 1003 (1990)
• 5. H. Kobayashi, H. Mori, Y. Ishida, J. Appl. Phys. 77, 1301 (1995)
• 6. M.-S. Wu, W.-C. Shih, W.-H. Tsai, J. Phys. D, Appl. Phys. 31, 943 (1998)
• 7. K. Nakamura, T. Shoji, K. Hee-Bog, Jpn. J. Appl. Phys. Part 2: Lett. 39, 534 (2000)
• 8. A.K. Gyani, O.F.Z. Khan, P.O. Brien, D.S. Urch, Thin Solid Films 182, L1 (1989)
• 9. J. Ma, F. Ji, H.-I. Ma, S.-Y. Li, J. Vac. Sci. Technol. A 13, 92 (1995)
• 10. S. Nassem, M. Iqbal, K. Hussain, Sol. Energy Mater. 31, 155 (1993)
• 11. T. Minami, H. Sonohara, S. Takata, H. Sato, Jpn. J. Appl. Phys., Part 2: Lett. 33, 743 (1994)
• 12. F.D. Paraguay, W.L. Estrada, D.R.N. Acosta, E. Andrade, M. Miki-Yoshida, Thin Solid Films 350, 192 (1999)
• 13. M.N. Kamalasanan, S. Chandra, Thin Solid Films 288, 112 (1996)
• 14. D. Poelman, P. Frederic Smet, J. Phys. D, Appl. Phys. 36, 1850 (2003)
• 15. J. Tauc, R. Grigorvici, Y. Yanca, Phys. Status Solidi 15, 627 (1966)
• 16. S.A. Studenikin, N. Golego, M. Cocivera, J. Appl. Phys. 84, 4 (1998)
• 17. K. Vanheusden, C.H. Seager, W.L. Warren, D.R. Tallant, J.A. Voigt, J. Appl. Phys. 68, 403 (1996)
• 18. R.B. Wehrspohn, Ordered Porous Nanostructures and Applications, Springer Science Business Media Inc., New York 2004, p. 59
• 19. S.A. Studenikin, N. Cocivera, H. Pascher, J. Lumin. 91, 223 (2000)
• 20. L. Znaidi, G.J.A.A. Soler Illia, S. Benyahia, C. Sanchez, A.V. Kanaev, Thin Solid Films 428, 257 (2003)

Identifiers

DOI

10.12693/APhysPolA.118.659