PL EN


Preferences help
enabled [disable] Abstract
Number of results
2010 | 118 | 3 | 447-449
Article title

The Influence of Argon on the Deposition and Structure of Polycrystalline Diamond Films

Content
Title variants
Languages of publication
EN
Abstracts
EN
Thin polycrystalline diamond films were deposited on prepared (100) Si substrate by hot filament chemical vapor deposition using a mixture of hydrogen, propane-butane and argon. During investigations the gas flow of argon was varied from 100 sccm to 400 sccm. Scanning electron microscopy analysis revealed that the addition of argon to the gas phase influenced the growth rate and film structure. An increase of argon concentration provokes an increase in film porosity and decrease in crystalline facetting. The quality of these films was investigated with the use of the Raman spectroscopy.
Keywords
EN
Year
Volume
118
Issue
3
Pages
447-449
Physical description
Dates
published
2010-09
References
  • 1. S. Matsumoto, Y. Sato, M. Kamo, N. Setaka, Jpn. J. Appl. Phys. 21, 182 (1982)
  • 2. A.R. Badzian, T. Badzian, R. Roy, R. Messier K.E. Spear, Mater. Res. Bull. 23, 531 (1988)
  • 3. J.C. Arnault, L. Demuynck, C. Speisser, F. Le Normand, Euro Phys. J. B 11, 327 (1999)
  • 4. S. Buhlmann, E. Blank, R. Haubner, B. Lux, Diamond Relat. Mater. 8, 194 (1999)
  • 5. V. Baranauskas, H.J. Ceragioli, A.C. Peterlevitz, M.C. Tosin, S.F. Durrant, Thin Solid Films 377-378, 303 (2000)
  • 6. V. Baranauskas, H.J. Ceragioli, A.C. Peterlevitz, M.C. Tosin, S.F. Durrant, Thin Solid Films 377-378, 182 (2000)
  • 7. F. Rozpłoch, E. Fitzer, High Temperatures-High Pressures 20, 449 (1988)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv118n303kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.