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2010 | 118 | 2 | 406-408
Article title

Magnetoresistance of Si/Nb/Si Trilayers

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Abstracts
EN
We study the superconductor-insulator transition in Si/Nb/Si trilayers, in which the thickness of Si is fixed at 10 nm, and the nominal thickness of Nb changes in the range between d = 20 nm down to d = 0.3 nm. The transmission electron microscopy indicates the formation of the mixed Nb-Si layer for small d. Both the thickness-induced, and the magnetic-field induced superconductor-insulator transition is observed. The crossing point of the isotherms at the critical field B_{c} decreases with decreasing d, and it is T-independent at temperatures below 300 mK. At larger fields the weak peak in magnetoresistance appears in some of the films.
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Contributors
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, MD 21218, USA
author
  • Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, MD 21218, USA
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Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv118n247kz
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