Journal
Article title
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Abstracts
We present a method of measurement of the current-voltage (I-V) and conductance-voltage (G-V) characteristics of nanowires with quantum point contact formed at the Co-Ge_{99.99}Ga_{0.01} interface. The effect of the Fermi level pinning leads to the formation of an ohmic contact between Co and Ge_{99.99}Ga_{0.01}. On the measured characteristics, above the threshold value of voltage an exponential current growth is observed. Such effect could be useful in the production of the electronic nanodevices.
Discipline
- 73.63.Rt: Nanoscale contacts
- 79.60.Jv: Interfaces; heterostructures; nanostructures
- 68.65.-k: Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties(for structure of nanoscale materials, see 61.46.-w; for magnetic properties of interfaces, see 75.70.Cn; for superconducting properties, see 74.78.-w; for optical properties, see 78.67.-n; for transport properties, see 73.63.-b; for thermal properties of nanocrystals and nanotubes, see 65.80.-g; for mechanical properties of nanoscale systems, see 62.25.-g)
Journal
Year
Volume
Issue
Pages
375-378
Physical description
Dates
published
2010-08
Contributors
author
- Faculty of Electronics and Telecommunications, Poznań University of Technology, Piotrowo 3A, 60-965 Poznań, Poland
author
- Faculty of Electronics and Telecommunications, Poznań University of Technology, Piotrowo 3A, 60-965 Poznań, Poland
author
- Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań, Poland
author
- Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań, Poland
author
- Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań, Poland
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv118n238kz